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公开(公告)号：DE3175352D1
公开(公告)日：1986-10-23
申请号：DE3175352
申请日：1981-10-29
Applicant: IBM
Inventor： BARBEE STEVEN GEORGE , LEAS JAMES MARC , LLOYD JAMES ROBERT , NAGARAJAN ARUNACHALA
IPC: H01L29/73 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/768 , H01L21/822 , H01L23/52 , H01L27/00 , H01L27/12 , H01L29/04 , H01L21/268
Abstract: The semiconductor device, such as a bipolar transistor, is formed in superposed layers doped with various types and concentrations of doping impurities. Said layers forming a thin monocrystalline semiconductor film (11) are supported on the surface of a substrate and contacted electrically with a conductive network on top of thin film (11). Two or several of such devices can be stacked one upon the other and interconnected electrically. Thin film (11) is produced preferably from a non-monocrystalline semiconductor film having the defined dopant distribution and a tapered region (14) terminating in a point (15). Starting at point (15) the thin film (11) is traversed with a particle beam causing the growth of a monocrystalline thin film (11). The device and method are useful in the VLSI-technology.
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