公开(公告)号：DE3650544D1

公开(公告)日：1996-08-29

申请号：DE3650544

申请日：1986-04-04

Applicant: IBM

Inventor： FOUTS DAVID PERRY ,  GUPTA DEVANDRA ,  HO PAUL SIU-CHUNG ,  JASPAL JASVIR SINGH ,  LLOYD JAMES ROBERT ,  OBERSCHMIDT JAMES MICHAEL ,  SKIKRISHNAN KRIS VENKATRAMAN ,  SULLIVAN MICHAEL JAMES

IPC: B23K1/00 ,  B23K35/26 ,  C22C1/00 ,  C22C11/06 ,  H01B1/02 ,  H01B13/00

公开(公告)号：DE2424857A1

公开(公告)日：1975-01-16

申请号：DE2424857

申请日：1974-05-22

Applicant: IBM

Inventor： HERDZIK RICHARD JOSEPH ,  JEANNOTTE DEXTER ANTHONY ,  PETERSON GERALD WILLIAM ,  SULLIVAN MICHAEL JAMES

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/36

公开(公告)号：DE3275683D1

公开(公告)日：1987-04-16

申请号：DE3275683

申请日：1982-04-15

Applicant: IBM

Inventor： FOUTS DAVID PERRY ,  JASPAL JASVIR SINGH ,  ROUSH WALDEN BENNET ,  SULLIVAN MICHAEL JAMES

IPC: G01B11/24 ,  G01B11/30 ,  H01L21/66

公开(公告)号：DE3650544T2

公开(公告)日：1997-02-06

申请号：DE3650544

申请日：1986-04-04

Applicant: IBM

Inventor： FOUTS DAVID PERRY ,  GUPTA DEVANDRA ,  HO PAUL SIU-CHUNG ,  JASPAL JASVIR SINGH ,  LLOYD JAMES ROBERT ,  OBERSCHMIDT JAMES MICHAEL ,  SKIKRISHNAN KRIS VENKATRAMAN ,  SULLIVAN MICHAEL JAMES

IPC: B23K1/00 ,  B23K35/26 ,  C22C1/00 ,  C22C11/06 ,  H01B1/02 ,  H01B13/00

公开(公告)号：DE3379819D1

公开(公告)日：1989-06-08

申请号：DE3379819

申请日：1983-02-23

Applicant: IBM

Inventor： FOUTS DAVID PERRY ,  JASPAL JASVIER SINGH ,  LLOYD JAMES ROBERT ,  ROUSH WALDEN BENNETT ,  SULLIVAN MICHAEL JAMES

IPC: C22F1/14 ,  B23K31/02 ,  H01L21/60 ,  H05K3/34

公开(公告)号：DE2754397A1

公开(公告)日：1978-06-29

申请号：DE2754397

申请日：1977-12-07

Applicant: IBM

Inventor： PERESSINI PETER PAUL ,  REITH TIMOTHY MARTIN ,  SULLIVAN MICHAEL JAMES

IPC: H01L27/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8222 ,  H01L29/47 ,  H01L29/872 ,  H01L29/48

Abstract: The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces the area of the chip used by other guardring forming techniques of the prior art. The method involves first opening a hole in an insulator to expose the silicon surface. The Schottky barrier forming metal is then deposited over the insulator and the silicon surface. Heat treatment of the appropriate temperature and time is utilized to form the metal silicide Schottky barrier device. During this device formation, there is a volume shrinkage in the metal silicide which forms a narrow annulus of exposed silicon around the metal silicide contact. The unreacted metal is removed. Ion implantation of ion of opposite polarity to the exposed silicon is imparted to the structure to form a guardring surrounding the Schottky barrier device.