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    PINNING LAYER OF MAGNETIC DEVICE
    1.
    发明专利
    PINNING LAYER OF MAGNETIC DEVICE 失效

    公开(公告)号：JP2000307171A

    公开(公告)日：2000-11-02

    申请号：JP2000068714

    申请日：2000-03-13

    Applicant: IBM

    Inventor： ALLENSPACH ROLF ,  FOMPEYRINE JEAN ,  FULLERTON ERIC ,  LOCQUET JEAN-PIERRE ,  MORAN TIMOTHY ,  SEO MARIA

    IPC: G01R33/09 ,  G11B5/39 ,  G11B5/66 ,  G11B5/74 ,  H01F10/22 ,  H01F10/32 ,  H01F41/18 ,  H01F41/22 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    Abstract: PROBLEM TO BE SOLVED: To realize a pinning layer which is capable of causing a strong pinning effect at a high operating temperature by binging an anti-ferromagnetic layer into direct contact with a ferromagnetic layer so as to induce an exchange bias in the ferromagnetic layer. SOLUTION: A GMR sensor 10 includes a substrate 11 of glass or the like, and a first layer of soft ferromagnetic matter, a second layer 14 of non-magnetic metal matter, a third layer 16 of ferromagnetic matter which is preferably hard magnetic so as to fix its magnetization at a prescribed position, and a fourth layer 18 of anti-ferromagnetic matter functioning as a pinning layer 18 are deposited on the substrate 11. Either or both of the ferromagnetic layers 12 and 16 are formed of Co, cobalt alloy, or other ferromagnetic matter. The second layer 14 of anti-magnetic metal matter functioning as a spacer layer may be formed of precious metal such as Cu, silver or the like. The third layer 16 is fixed or pinned down by the pinning layer 18. Therefore, a magnetic device which includes the structure mentioned above can be normally used in a high-operating temperature environment.

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