公开(公告)号：FR2335959A1

公开(公告)日：1977-07-15

申请号：FR7634521

申请日：1976-11-08

Applicant: IBM

Inventor： LOVE ROBERT D ,  CULLEN JAMES W ,  KRUPPA ROBERT W

IPC: H01L21/82 ,  H01L27/04 ,  H01L21/822 ,  H01L27/088 ,  H01L27/118 ,  H01L29/78 ,  H03K3/356 ,  H03K19/0944 ,  H01L27/08 ,  H03K19/08

Abstract: A depletion mode load device structure is disclosed which improved upon the existing Weinberger layout technique, as applied to enhancement mode/depletion mode circuitry. The structure of an FET, self biased load device includes a single metallized vertical line performing three functions: a source contact for the FET device, the gate electrode for the FET device, and the output line for the circuit for which the device serves as the load. Use of this structure results in an increased horizontal circuit packing density, which is particularly useful in the decoder circuits for a programmed logic array.

公开(公告)号：DE2961322D1

公开(公告)日：1982-01-14

申请号：DE2961322

申请日：1979-08-23

Applicant: IBM

Inventor： GLADSTEIN LEO A ,  LOVE ROBERT D ,  MARTIN LARRY C

IPC: H01L27/04 ,  G05F3/20 ,  G11C11/407 ,  H01L21/822 ,  H01L29/78 ,  H02M3/07 ,  H01L23/56 ,  H02M3/155

Abstract: An FET substrate voltage generator circuit is disclosed for converting a single power supply and ground potential to a negative potential having an absolute value whose magnitude is greater than the power supply potential and applying that potential to the substrate of an integrated circuit upon which it is formed. The circuit dissipates less power per unit of current supplied by the circuit and occupies less space than do prior art circuits. The circuit applies the principle of voltage doubling to a first capacitor to achieve the desired voltage magnitude across a second capacitor and then applies the principle of a.c. coupling to that second capacitor connected through an impedance to the first capacitor, to achieve the desired polarity inversion for the substrate voltage to be generated. This circuit provides the current generating capacity necessary to drive the substrate to a negative voltage and sink the required current so as to maintain the substrate at an adequate negative bias.