公开(公告)号：DE1298138B

公开(公告)日：1969-06-26

申请号：DEI0033489

申请日：1967-04-20

Applicant: IBM

Inventor： EVANS CASTELLANI EUGENE ,  EDWARD KEEFE GEORGE ,  LUBOMYR ROMANKIW

IPC: G11C11/15 ,  G11C17/02 ,  G11B5/00

Abstract: 1,123,658. Magnetic storage apparatus. INTERNATIONAL BUSINESS MACHINES CORP. 15 June, 1967 [15 July, 1966], No. 27674/67. Heading H3B. [Also in Division H1] A non-destructive-readout memory device comprises a pair of anisotropic magnetic films having parallel easy axes of magnetization, each film being disposed in the flux return path of the other film so that the magnetic coupling between the films provides two stable states for data storage in which the respective easy axis magnetizations of the film are in antiparallel relationships and one film is thicker than the other. In the normal quiescent state of a bit of a word organized memory, Figs. 1, 3, the stray flux of the bottom film F1 is closed through the top, thicker, film F2, while the stray flux of the top film F2 closes partly through the bottom film F1 and partly through a magnetic keeper 22 supported by a bit/sense line 12. The magnetization vectors M1, M2 of the two films extend in anti-parallel directions along the easy axes EA of the two films, the respective directions determining the bit to be stored. In order to read a selected word from the store the appropriate word driver 14 is activated to send a read pulse IR through the corresponding word line 10 which returns through ground plane 16 resulting in the magnetization of the bottom film F1 being rotated into the hard axis direction M1 1 , Fig. 4, aligned with the read field HR. The stray magnetic field of film F1 which is anti-parallel with vector M1 1 is applied to the top film F2 but since this film is much thicker than film F1 the vector M2 is rotated through an angle much less than 90 degrees and has a component parallel M2 11 and transverse M2 1 to the easy axis of the film. The component M2 11 provides a bias field HB in film F1 The rapid rotation of the vector M1 in the lower film F1 induces a signal in sense line 12 connected to amplifier 18. When the read pulse terminates vector M2 rotates into its normal position and bias field HB acts on vector M1 1 in film F1 to restore it to its normal position. In order to write a word of information into the store, word driver 14 or a separate word driver sends a pulse through word line 10 and the bit drivers 20 send a pulse of appropriate polarity through bit lines 12, the latter pulses terminating after the word pulse. The pulses result in the magnetizations M1, M2 of the two films assuming like polarities along the easy axes, Fig. 9, both fluxes being closed through the keeper film 22 M4. Immediately after the films have attained this state a pulse resembling a read pulse is sent through the word line which produces a field similar to HR and places the magnetizations into the positions M1 1 and M2 shown in Fig. 4. When the pulse ends the selfrestoring action of film F2 returns M2 into its original position but biases M1 into an antiparallel direction shown in Fig. 3.

公开(公告)号：GB2536814A

公开(公告)日：2016-09-28

申请号：GB201604426

申请日：2016-03-16

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  NAIGANG WANG ,  LUBOMYR ROMANKIW ,  WILLIAM JOSEPH GALLAGHER ,  ANDREW JOHN KELLOCK ,  EUGENE O'SULLIVAN

IPC: H01L43/02 ,  C23C18/16 ,  C23C18/50 ,  H01F41/24 ,  H01L21/288 ,  H01L43/12

Abstract: An on-chip (on die) magnetic structure manufactured on a semiconductor (Si, GaAs, SiC) substrate 110, comprising (in sequence from substrate) an adhesive layer 120 upon which is deposited a Ni, Co, Pd or Cu seed layer 130 which has been further activated by immersion in a palladium Pd rich solution, to form a thin Pd nanoparticle over-layer 510. The cobalt-tungsten-phosphorus layer 610 is deposited by electroless plating on the palladium rich seed layer 510, 130 to form a high electrical resistivity Pd/CoWP magnetic layer 610/510 (620). The layers may be conventionally defined by photolithography. The magnetic material 620 comprises cobalt Co in a range 80 - 90 atomic percent (at. %) based on the total number of atoms of the magnetic material, tungsten (W) in a range from 4 to 9 atomic percent, and phosphorous (P) in a range from 7 to 15 atomic percent, (and more preferably 9 to 11 at%), the material further comprising palladium Pd dispersed throughout the magnetic material. The Palladium comprising Cobalt-Tungsten-Phosphorus (Pd + CoWP or Pd/CoWP) magnetic material 620 is preferably amorphous. The on chip magnetic structure resistivity is in excess of 100 µΩ.cm. The on chip magnetic structure may be a magnetic yoke, slab, inductor or transformer. The magnetic seed layer may be at least 40nm thick, the Pd-CoWP magnetic layer 620 having thickness 200nm to 1200nm (1.2µm). Applications for the magnetic structure may include miniature power converters.