公开(公告)号：JPH09172411A

公开(公告)日：1997-06-30

申请号：JP27199796

申请日：1996-10-15

Applicant: IBM

Inventor： RABI SHIYANKAA ANASU ,  SAJIIRU MUNISUWAMI GOODA ,  MAAKU SAMUSON MIRUSHIYUTEIN ,  MAAKU BII RITSUTAA ,  DENISU RII ROJIYAAZU

IPC: H04B10/60 ,  H04B10/07 ,  H04B10/114 ,  H04B10/40 ,  H04B10/50 ,  H04B10/69 ,  H04B10/28 ,  H04B10/04 ,  H04B10/06 ,  H04B10/14 ,  H04B10/26

Abstract: PROBLEM TO BE SOLVED: To obtain an automatically adaptive threshold setting circuit by measuring a current flowing a reverse bias IR light detector corresponding to the surrounding light level and using this current for adjusting the sensitivity of a receiver. SOLUTION: The current flowing through a resistor 21 is a function of surrounding light in the light detector 11, the outputs of a buffer and a level shifter 22 becomes input to a current mirror consisting of transistors 23 and 24, and the current mirror operates as a variable impedance. One input of a level restoring circuit 26 is connected to the positive input of an amplifier 17 to be a node A and the other input is connected to a node B. A threshold is set by drawing a current through a resistor 25 and generating voltage at the node B so as to sense a voltage level at the output of the post amplifier 17. Then voltage at a node C is always offset from a level at the node A to be positive and this offset quantity is the threshold.

公开(公告)号：JPH05160427A

公开(公告)日：1993-06-25

申请号：JP14184292

申请日：1992-06-03

Applicant: IBM

Inventor： JIEREMII EICHI BAROUUZU ,  MAAKU SAMUSON MIRUSHIYUTEIN ,  MAIKERU ARUBAATO TEISHIYURAA ,  SANDEITSUPU TEIWARI ,  SUTEIIBUN RORENTSU RAITO

IPC: H01L31/10 ,  H01L31/0224 ,  H01L31/105 ,  H01L31/18

Abstract: PURPOSE: To provide a lateral PIN hetero-junction device, possessed of a stepped hetero-junction region and a sloping diffused region. CONSTITUTION: A III-V hetero-structure 10, which comprises a substrate 12, an intrinsic layer 14, and an upper layer 16 is provided. The band gap energy of the intrinsic layer 14 is smaller than that of the upper layer 16, and a hetero- junction 32 is formed between the intrinsic layer 14 and the upper layer 16. Then, a contact material 22 which contains a p-type dopant and a contact material 28 which contains an n-type dopant are attached to the upper layer 16, and the dopants are diffused by annealing at the same time so as to penetrate through a hetero-junction. As a result, compound semiconductors which form a hetero-junction is mixed in composition in diffused regions 34 and 36.