1.
    发明专利
    未知

    公开(公告)号:DE69219467D1

    公开(公告)日:1997-06-05

    申请号:DE69219467

    申请日:1992-09-11

    Applicant: IBM

    Abstract: Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a seperate annealing step. The method can be used to produce thin films of high-Tc-superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.

    6.
    发明专利
    未知

    公开(公告)号:DE69219467T2

    公开(公告)日:1997-10-23

    申请号:DE69219467

    申请日:1992-09-11

    Applicant: IBM

    Abstract: Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a seperate annealing step. The method can be used to produce thin films of high-Tc-superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.

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