公开(公告)号：GB2494360A

公开(公告)日：2013-03-06

申请号：GB201300091

申请日：2011-06-08

Applicant: IBM

Inventor： DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  MALING JEFFREY

IPC: B81C1/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires (14) from the lower wiring layer. The method further includes forming an electrode beam (38) over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition (50).