公开(公告)号：JP2002343883A

公开(公告)日：2002-11-29

申请号：JP2002096272

申请日：2002-03-29

Applicant: IBM

Inventor： PARK HEEMYONG ,  ASSADERAGHI FARIBORZ ,  AJMERA ATUL C ,  SHAHIDI GHAVAM G

IPC: H01L29/41 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a CMOS structure and a method of achieving self-aligned raised source/drain for CMOS structures on SOI without relying on selective epitaxial growth of silicon. SOLUTION: In this method, CMOS structures are provided by performing sacrificial oxidation so that oxidation occurs on the surface of both the SOI and BOX interfaces. This sacrificial oxidation allows oxide spacer formation for gate-to-source/drain isolation, which enables raised source/drain fabrication without increasing contact resistance.

公开(公告)号：JP2003110103A

公开(公告)日：2003-04-11

申请号：JP2002218768

申请日：2002-07-26

Applicant: IBM

Inventor： PARK HEEMYONG ,  MAR H WILLIAM ,  ASSADERAGHI FARIBORZ

IPC: H01L21/283 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for shielding high dielectric constant materials from the thermal effects of annealing. SOLUTION: A semiconductor transistor is formed on a substrate which has an activated source region, drain region, gate region, channel formed between the source region and the drain region and arranged under the gate region, and a high dielectric constant material which is not thermally deteriorated and formed in at least a part of the gate region.