Abstract:
PROBLEM TO BE SOLVED: To obtain a method, a system and a computer program for providing information for correlating the edges of a layout shape to a critical area of design and defects so that a designer can improve the sensitivity of design to various types of faults. SOLUTION: The method, the apparatus and the computer program for visually indicating interaction between one or more edges of a design that contribute a pattern of a determined critical area are provided. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method which optimize router settings so as to improve IC yield, and to provide a computer program product. SOLUTION: Yield data in an IC manufacturing line are reviewed so as to identify structure-specific mechanisms that impact the IC yield. Next, with respect to each structure-specific mechanism, a structural identifier including a wire code, a tag and/or unique identifiers is established. With respect to a wire having different width, the structural identifier is established. Subsequently, the weighting factor is established for each structure-specific mechanism in such a way that a higher weighting factor is established with respect to a structure-specific mechanism including a thick wire which is the most proximate to multiple thick wires. The structural identifier and the weighting factor with respect to the spacing produced between single width lines, double width lines, and triple width lines and wires arranged on a large metal land. Then, the router settings are modified based on the structural identifier and the weighting factor so as to minimize systematic defects. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
A pixel structure for an image sensor includes a semiconductor material portion (30) having a coplanar and contiguous semiconductor surface and including four photodiodes (30A, 30B, 30C, 30D), four channel regions (31A, 31B, 31C, 31D), and a common floating diffusion region (32). Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants (1Q_O1, 2Q-01, 3Q_01, 4Q_01) as defined employing a vertical line passing through a point (01) within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor (RG), a source follower transistor (SF), and a row select transistor (RS) are located within four different quadrants (1Q_O2, 2Q_02, 3Q_02, 4Q_02) as defined employing a vertical line passing through a point (02) within one of the photodiodes (30A) as an axis.