公开(公告)号：DE3460764D1

公开(公告)日：1986-10-23

申请号：DE3460764

申请日：1984-06-22

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  KLOKHOLM ERIK ,  MC GUIRE THOMAS ROCHE

IPC: G01R33/09 ,  C22C19/03 ,  C22C38/00 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  G01R33/06

Abstract: A magnetic field sensing device employs a magnetoresistive element which exhibits a negative DELTA rho effect ( DELTA rho = rho ||- rho ORTHOGONAL ) when a magnetic field is applied to it to magnetise it to saturation at room temperature. The electrical resistivity rho ORTHOGONAL of the element in a direction perpendicular to the direction of current through the element is greater than the electrical resistivity rho || of the element in a direction parallel to the direction of the electrical current through the element. The magnetoresistive element is formed from a ferromagnetic material containing at least one of Ni; Fe and Co together with Ir in an amount sufficient to cause the element to exhibit negative anisotropic magnetoresistance at room temperature.