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    BUBBLE DOMAIN DEVICES USING GARNET MATERIALS WITH SINGLE RARE EARTH ION ON ALL DODECAHEDRAL SITES
    1.
    发明专利
    BUBBLE DOMAIN DEVICES USING GARNET MATERIALS WITH SINGLE RARE EARTH ION ON ALL DODECAHEDRAL SITES 未知

    公开(公告)号：CA1035036A

    公开(公告)日：1978-07-18

    申请号：CA212326

    申请日：1974-10-25

    Applicant: IBM

    Inventor： KLOKHOLM ERIK ,  PLASKETT THOMAS S

    IPC: G11C11/14 ,  G11C19/08 ,  H01F10/24

    Abstract: Bubble domain devices using conventionally known elements for providing a plurality of bubble domain functions, including writing, storage and reading, are provided using a magnetic medium of garnet structure characterized by the presence of a single rare earth ion present in all available dodecahedral lattice sites. These devices operate well over room temperature ranges. This material has sufficiently high anisotropy (of the order 105 ergs/cm3) to support stable magnetic bubble domains in the material. The anisotropy is growth induced and cannot be explained by conventionally accepted theories of anisotropy in garnet bubble domain materials. In preferred embodiments, these rare earth iron garnet films are deposited on suitable substances, which can be any non-magnetic materials having suitable lattice constants to provide substantial lattice match with the magnetic garnet films. Examples are Eu3Fe5O12 on Nd3Ga5O12 or (Pr,Sm)3Ga5O12 substrates; and Sm3Fe5O12 on (Pr,Nd)3Ga5O12 substrates.

    MAGNETIC FIELD SENSING DEVICE
    2.
    发明专利
    MAGNETIC FIELD SENSING DEVICE 未知

    公开(公告)号：DE3460764D1

    公开(公告)日：1986-10-23

    申请号：DE3460764

    申请日：1984-06-22

    Applicant: IBM

    Inventor： ABOAF JOSEPH ADAM ,  KLOKHOLM ERIK ,  MC GUIRE THOMAS ROCHE

    IPC: G01R33/09 ,  C22C19/03 ,  C22C38/00 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  G01R33/06

    Abstract: A magnetic field sensing device employs a magnetoresistive element which exhibits a negative DELTA rho effect ( DELTA rho = rho ||- rho ORTHOGONAL ) when a magnetic field is applied to it to magnetise it to saturation at room temperature. The electrical resistivity rho ORTHOGONAL of the element in a direction perpendicular to the direction of current through the element is greater than the electrical resistivity rho || of the element in a direction parallel to the direction of the electrical current through the element. The magnetoresistive element is formed from a ferromagnetic material containing at least one of Ni; Fe and Co together with Ir in an amount sufficient to cause the element to exhibit negative anisotropic magnetoresistance at room temperature.

    A MAGNETIC RECORDING MEDIUM
    4.
    发明专利
    A MAGNETIC RECORDING MEDIUM 未知

    公开(公告)号：DE3267119D1

    公开(公告)日：1985-12-05

    申请号：DE3267119

    申请日：1982-05-14

    Applicant: IBM

    Inventor： ABOAF JOSEPH ADAM ,  KLOKHOLM ERIK ,  HERD SIGRID RENEE

    IPC: G11B5/66 ,  C22C19/07 ,  G11B5/64 ,  H01F10/16 ,  H01F41/18

    Abstract: This invention relates to a magnetic recording medium comprising a sputtered polycrystalline film of material having the formula CoxPty where x (Co) is up to 90 atomic percent of said material and y (Pt) is from 10 to 30 atomic of said material. The film has a magnetostriction value of from -35 x 10 to a value near substantially zero magnetostriction in the range of +/- 10 x 10 . The material has a coercivity Hc of from 500 to 2000 oersteds with a saturation magnetization of 400 gauss to 15,000 gauss.

    6.
    发明专利
    未知

    公开(公告)号：DE2453251A1

    公开(公告)日：1975-05-15

    申请号：DE2453251

    申请日：1974-11-09

    Applicant: IBM

    Inventor： KLOKHOLM ERIK ,  PLASKETT THOMAS S

    IPC: G11C11/14 ,  G11C19/08 ,  H01F10/24 ,  H01F10/02

    Abstract: Bubble domain devices using conventionally known elements for providing a plurality of bubble domain functions, including writing, storage and reading, are provided using a magnetic medium of garnet structure characterized by the presence of a single rare earth ion present in all available dodecahedral lattice sites. These devices operate well over room temperature ranges. This material has sufficiently high anisotropy (of the order 105 ergs/cm3) to support stable magnetic bubble domains in the material. The anisotropy is growth induced and cannot be explained by conventionally accepted theories of anisotropy in garnet bubble domain materials. In preferred embodiments, these rare earth iron garnet films are deposited on suitable substances, which can be any non-magnetic materials having suitable lattice constants to provide substantial lattice match with the magnetic garnet films. Examples are Eu3Fe5O12 on Nd3Ga5O12 or (Pr,Sm)3Ga5O12 substrates; and Sm3Fe5O12 on (Pr,Nd)3Ga5O12 substrates.

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