公开(公告)号：GB2488078B

公开(公告)日：2014-02-26

申请号：GB201209593

申请日：2010-11-09

Applicant: IBM

Inventor： MCALLISTER MICHAEL ,  SHAPIRO MICHAEL J ,  KIM TAE HONG ,  SPROGIS EDMUND J

IPC: H01L21/822 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L27/06

公开(公告)号：GB2488078A

公开(公告)日：2012-08-15

申请号：GB201209593

申请日：2010-11-09

Applicant: IBM

Inventor： MCALLISTER MICHAEL ,  SHAPIRO MICHAEL J ,  KIM TAE HONG ,  SPROGIS EDMUND J

IPC: H01L21/822 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L27/06

Abstract: A capacitor (180) in a semiconductor substrate (10) employs a conductive through-substrate via (TSV) (80) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor (80) provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSVs can be provided in the semiconductor substrate (10) to provide electrical connection for power supplies and signal transmission therethrough. The capacitor (180) has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips.