公开(公告)号：US3873313A

公开(公告)日：1975-03-25

申请号：US36263773

申请日：1973-05-21

Applicant: IBM

Inventor： HORST RICHARD S ,  KAPLAN LEON H ,  MERRITT DAVID P

IPC: G03F7/11 ,  H01L21/00 ,  H01L23/29 ,  G03C5/00

CPC classification number: H01L21/00 ,  G03F7/11 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A resist mask formation process in which a first layer of photoresist is applied to a substrate, blanket exposed to react the photoactive material in the resist and postbaked. A second layer of photoresist is then applied, exposed patternwise, and portions of the substrate are uncovered by solvent development of the resist layers.

Abstract translation: 抗蚀剂掩模形成工艺，其中将第一层光致抗蚀剂施加到基底，橡皮布暴露以使抗蚀剂中的光活性材料反应并进行后烘烤。 然后施加第二层光致抗蚀剂，以图案方式露出，并且通过抗蚀剂层的溶剂显影来覆盖基底的一部分。

公开(公告)号：CA2001384A1

公开(公告)日：1990-04-28

申请号：CA2001384

申请日：1989-10-24

Applicant: IBM

Inventor： MERRITT DAVID P ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: C09D11/10 ,  C08F8/14 ,  G03F7/039 ,  H01L21/027

Abstract: Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendant to the polymer backbone, a portion of which groups are substituted with acid labile groups.