公开(公告)号：DE3377556D1

公开(公告)日：1988-09-01

申请号：DE3377556

申请日：1983-12-15

Applicant: IBM

Inventor： CHAKRAVARTI SATYA NARAYAN ,  GARBARINO PAUL LOUIS ,  MILLER DONALD ABRAM

IPC: H01L27/10 ,  H01L21/66 ,  H01L21/822 ,  H01L27/04 ,  H01L27/108

Abstract: A method for leakage current characterization in the manufacture of dynamic random access memory cells is disclosed. The method includes the forming of two large gate-controlled diodes (A, B), each diode having a diffused junction which is substantially identical with that of the other diode. The gates (P1, P11) of the diodes have different perimeter-to-area ratios such that when testing is carried out, the leakage current components due to the contribution of the thin oxide area (14) can be isolated from the perimeter-contributed components of the isolating thick oxide (24). Dynamic testing can also be performed and, because of the small area for the test site, an "on chip" amplifier (T1, T2) can be provided at the site.