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公开(公告)号：DE19951686A1
公开(公告)日：2000-05-18
申请号：DE19951686
申请日：1999-10-27
Applicant: IBM
Inventor： SUZUKI SHUNJI , NOGUCHI MICHIKAZU , MIWA KOICHI
IPC: G02F1/1339
Abstract: Liquid crystal cell comprises a first substrate having a surface with a sealing position control structure, a seal applied on the upper side of the first substrate, and a second substrate lying above the surface of the first substrate and sealed by the seal. An Independent claim is also included for a process for the production of a liquid crystal cell comprising: (a) preparing an upper side defining the position for the seal near to the periphery along the surrounding of a surface of a first substrate, where the upper side forms a sealing position control structure; (b) applying the seal; (c) fluidizing the seal into a symmetrical shape around the center of the upper side; and (d) sealing the second substrate on the surface of the first substrate.
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公开(公告)号：JP2001282201A
公开(公告)日：2001-10-12
申请号：JP2000099100
申请日：2000-03-31
Applicant: IBM
Inventor： TSUJIMURA TAKATOSHI , MIWA KOICHI , SUZUKI HIROSHI
Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device which suppresses the writing deficiency of voltage to pixels. SOLUTION: Thin-film transistors(TFTs) 10b to which scanning signals are supplied across gate lines 40 shown in Figure n-1 go on. The display signals supplied to signal line 30 shown in Figure m-1 are selected and the voltage is impressed, i.e., written to display electrodes 20 of pixels Pn. Next, the TFTs 10a supplied with the scanning signals across the gate lines 40 turn on. The display signals supplied to the signal line 30 shown in Figure m are then selected and the voltage is impressed, i.e., written to the display electrodes 20 of the pixels Pn. Namely, the structure in which the voltage is first written across the TFTs 10b in the display electrodes 20 of the pixels Pn and thereafter the voltage is written across the TFTs 10a is adopted.
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公开(公告)号：JP2002312104A
公开(公告)日：2002-10-25
申请号：JP2001106211
申请日：2001-04-04
Applicant: IBM
Inventor： TSUJIMURA TAKATOSHI , MIWA KOICHI , SUZUKI HIROSHI
Abstract: PROBLEM TO BE SOLVED: To make a user efficiently and accurately understand information the operation member of which the user should operate in a current process, in a laptop personal computer 25. SOLUTION: An electrophoresis display 10 is mounted on a housing surface of the laptop personal computer 25. When an event requiring the user to operate an operation member occurs, an operation member and operation information corresponding to the event are searched, and the searched operation information is displayed on a part of the electrophoresis display 10 adjacent to the searched operation member. For example, if a termination switch 69 is located at an edge in an outer surface side of a cover 28, information prompting to operate the termination switch 69 is displayed at a part of the electrophoresis display 10 in the vicinity of the termination switch 69 for the event of terminating Windows (CR).
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4.发明专利
公开(公告)号：JP2001217427A
公开(公告)日：2001-08-10
申请号：JP2000028357
申请日：2000-02-04
Applicant: IBM
Inventor： TSUJIMURA TAKATOSHI , MIWA KOICHI
IPC: H01L29/786 , G02F1/136 , G02F1/1368
Abstract: PROBLEM TO BE SOLVED: To reduce the leak current in floating island parts formed in a thin film transistor and hold the required ON-current high for the TFT operation. SOLUTION: The transistor has a gate electrode 18 formed in a specified pattern above an insulation substrate, an amorphous Si film 16 formed corresponding to the patterning of the gate electrode 18, a source electrode 14 formed through this film 16, and a drain electrode 15 disposed with a specified space from the source electrode 14, the amorphous Si film 16 has a floating island part 22 not located above/below the gate electrode 18, and the source electrode 14 and the drain electrode 15 are constituted so that the channel length LOFF of the OFF-current in the floating island part 22 is longer than the channel length LON of the ON-current, formed by the source electrode 14 and the drain electrode 15 located above and below the gate electrode 18.
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公开(公告)号：JP2000137234A
公开(公告)日：2000-05-16
申请号：JP31145498
申请日：1998-10-30
Applicant: IBM
Inventor： SUZUKI SHUNJI , NOGUCHI MICHIKAZU , MIWA KOICHI
IPC: G02F1/1339
Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal cell with a narrow frame and high quality by sealing sealing material in adjacent to pixel area with regulating slippage of a coating position of sealing material sealing two substrates and with suppressing edge waviness of sealed sealing material. SOLUTION: A sealing position regulating pattern 100 and a sealing waviness regulating pattern 90 are formed in a periphery of at least one substrate of two substrates 50, 60 constituting a liquid crystal cell. As positioning accuracy of a coated sealing material 120 is improved and waviness in an edge of the sealed sealing material enable to make reduce or lose by these pattern, a space between the pixel area and the coated sealing material is possible to be minimized. And as enabling to bring a pixel area 70 as near as possible to surroundings of the liquid crystal cell, a liquid crystal sell dealing with a narrow frame without thickness irregularity enable to be provided.
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Patent Agency Ranking6.发明专利Thin film transistor, its manufacturing method, and active matrix display comprising thin film transistor 有权薄膜晶体管及其制造方法和包含薄膜晶体管的主动矩阵显示
公开(公告)号：JP2003303969A
公开(公告)日：2003-10-24
申请号：JP2002098466
申请日：2002-04-01
Inventor： TSUJIMURA TAKATOSHI , KOBAYASHI KAZUMASA , MOROOKA MITSUO , MIWA KOICHI
IPC: G02F1/1368 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To provide a thin film transistor having a high mobility in which aging of the threshold value is improved, its fabricating method, and an active matrix display comprising the thin film transistor. SOLUTION: The thin film transistor comprises an insulating film 12 formed on a substrate 10, semiconductor layers 16a and 16b formed on an insulating film 14, a gate electrode 18, a source electrode 20 connected with the semiconductor layers, and a drain electrode 22 wherein the semiconductor layers 16a and 16b are formed such that electronic affinity decreases as they approach the insulating film 14 along the thickness direction thereof. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：提供具有提高阈值老化的高迁移率的薄膜晶体管，其制造方法和包括薄膜晶体管的有源矩阵显示器。 解决方案：薄膜晶体管包括形成在基板10上的绝缘膜12，形成在绝缘膜14上的半导体层16a和16b，栅电极18，与半导体层连接的源极20和漏极 电极22，其中半导体层16a和16b形成为使得当电子亲和力沿着其厚度方向接近绝缘膜14时，电子亲和力降低。 版权所有（C）2004，JPO
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公开(公告)号：JP2003295792A
公开(公告)日：2003-10-15
申请号：JP2002150386
申请日：2002-05-24
Inventor： TSUJIMURA TAKATOSHI , TANAKA ATSUSHI , MIWA KOICHI , MOROOKA MITSUO
IPC: H05B33/10 , G09F9/30 , G09G3/14 , H01L21/336 , H01L27/15 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/12 , H05B33/14 , H05B33/22
CPC classification number: H01L27/3244
Abstract: PROBLEM TO BE SOLVED: To provide an organic LED device which can cope with a large area, and to provide its efficient manufacturing method. SOLUTION: This organic LED device 10 is constituted on an insulation substrate 26 and includes switching TFT 12 and a driver TFT 14 formed on the substrate 26. Further, an organic LED element 16 is formed for every pixel through an insulation film 58 on the substrate 26, and connected to the driver TFT. This organic LED device 10 comprises an anode 34 and a cathode 36 connecting the driver TFT 12 and the organic LED element 16 formed on the upper side of the insulation film 58, the anode 34 connects a plurality of pixels as a common electrode and self-aligning property at the time of manufacturing is improved. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：提供一种能够应对大面积的有机LED装置，并提供其有效的制造方法。 解决方案：该有机LED器件10构成在绝缘基板26上，并且包括形成在基板26上的开关TFT 12和驱动TFT 14.此外，通过绝缘膜58形成每个像素的有机LED元件16 并且连接到驱动器TFT。 该有机LED器件10包括连接驱动TFT12和形成在绝缘膜58的上侧的有机LED元件16的阳极34和阴极36，阳极34连接作为公共电极的多个像素， 提高了制造时的对准性。 版权所有（C）2004，JPO
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8.发明专利Display inspecting apparatus, display inspecting method and parasitic capacitance inspecting method 审中-公开显示检查装置，显示检查方法和PARASITIC电容检查方法
公开(公告)号：JP2003042896A
公开(公告)日：2003-02-13
申请号：JP2001202698
申请日：2001-07-03
Inventor： TOKUHIRO OSAMU , MIWA KOICHI , FURUMOTO KATSUYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a technology for accurately evaluating the parasitic capacitance ratio accompanying with individual pixels.
SOLUTION: The apparatus comprises a signal feeder 4 for outputting a voltage signal controlled by a controller 8 to be fed to pixel electrodes; a light intensity detector 5 for detecting the light intensity of a part corresponding to the pixel electrodes on a liquid crystal cell substrate 2; and a computer 31 having a CPU for obtaining the variation quantity of the pixel voltage, based on the variation of the light intensity of the pixel electrode corresponding part detected by the detector 5, when a switching element is set from the ON state to the OFF state for controlling whether the voltage signal is fed to the pixel electrodes. The ratio of a parasitic capacitance of the pixel to the total capacitance is obtained from the variation of the pixel voltage obtained by the computer 31.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题：提供一种用于精确评估伴随各个像素的寄生电容比的技术。 解决方案：该装置包括：信号馈送器4，用于输出由控制器8控制的电压信号以供给像素电极; 用于检测与液晶单元基板2上的像素电极对应的部分的光强度的光强度检测器5; 以及计算机31，具有CPU，用于当开关元件从接通状态设置为OFF时，基于由检测器5检测到的像素电极对应部分的光强度的变化来获得像素电压的变化量 用于控制电压信号是否馈送到像素电极的状态。 从计算机31得到的像素电压的变化，求出像素的寄生电容与总电容的比。
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9.发明专利
公开(公告)号：JP2000193989A
公开(公告)日：2000-07-14
申请号：JP36476099
申请日：1999-12-22
Applicant: IBM
Inventor： SUZUKI SHUNJI , NOGUCHI MICHIKAZU , MIWA KOICHI , HONG CHANG LEE , SERAPHIM DONALD P , DEAN WILLIAM SKINNER
IPC: G02F1/13 , G02F1/1339
Abstract: PROBLEM TO BE SOLVED: To obtain a method for coating a corner area of a substrate with a sealant so that a liquid crystal cell can have a wide display area. SOLUTION: A projected part 100 is provided in the area of a side of one surface of a 1st substrate 20 and given a step so that the top surface of the corner area is lower. Using dispenser, the side area and corner area is coated with a sealant 30 along the circumference of the 1st substrate 20. When a 2nd substrate is put on the 1st substrate 20, the applied seal material 30 collapses, but the spread of the inside edge 36 of the sealant becomes smaller in the corner area of the liquid crystal cell because the step exists. This method prevents the sealant 30 from spreading inward in the corner area and the sealant can be formed while being controlled into a frame shape closely to the display area 13, so a wider display area than before can be realized.
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10.发明专利Display device, oled panel, device and method for controlling thin film transistor, and method for controlling oled display 审中-公开显示装置，OLED面板，用于控制薄膜晶体管的装置和方法以及用于控制OLED显示器的方法
公开(公告)号：JP2003302936A
公开(公告)日：2003-10-24
申请号：JP2002097545
申请日：2002-03-29
Inventor： TSUJIMURA TAKATOSHI , MIWA KOICHI , MOROOKA MITSUO
CPC classification number: G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2310/0254 , G09G2310/066 , G09G2320/0233 , G09G2320/043
Abstract: PROBLEM TO BE SOLVED: To reduce a plus shift of threshold voltage (Vth) generated in a thin film transistor when driving OLED by the thin film transistor. SOLUTION: An increase component of the threshold voltage (Vth) is removed by simultaneously switching on-off the gate voltage and drain voltage by an amorphous silicon TFT as a transistor for driving the OLED (Organic Light Emitting Diode). Namely, the OLED display 10 is provided with a driving circuit 20 for driving the OLED by the amorphous silicon TFT, and a supply line driver 14 for switching off the voltage to be supplied to the drain electrode in the amorphous silicon TFT when switching on-off the gate voltage to the gate electrode in the amorphous silicon TFT of the driving circuit 20. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：为了减少在通过薄膜晶体管驱动OLED时在薄膜晶体管中产生的阈值电压（Vth）的正移相。 解决方案：通过非晶硅TFT作为用于驱动OLED（有机发光二极管）的晶体管同时接通栅极电压和漏极电压来消除阈值电压（Vth）的增加分量。 也就是说，OLED显示器10设置有用于通过非晶硅TFT驱动OLED的驱动电路20，以及用于在切换开关时切断供给非晶硅TFT中的漏电极的电压的电源线驱动器14。 关闭驱动电路20的非晶硅TFT中的栅电极的栅极电压。（C）2004，JPO
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