公开(公告)号：EP1570511A4

公开(公告)日：2009-06-10

申请号：EP03786848

申请日：2003-11-19

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/26506 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624 ,  H01L21/76251 ,  Y10S438/933

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：JP2006135319A

公开(公告)日：2006-05-25

申请号：JP2005309279

申请日：2005-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAINE C BOYD ,  CAI JUAN ,  KEVIN K CHAN ,  MOONEY PATRICIA M ,  KERN LIM

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/1054 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823807 ,  H01L29/7842 ,  Y10S438/938

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure for use in n-type and p-type MOSFET devices, and the method of manufacturing the same.
SOLUTION: A semiconductor structure is formed such that the layer structure of a wafer region by which an n-type MOSFET is manufactured is different from the layer structure of a wafer region by which a p-type MOSFET is manufactured. First, the structure is manufactured by forming a damage region on the front surface of an Si content substrate by ion implantation of a light atom such as He. Then, strained SiGe alloy is formed on the Si content substrate comprising the damage region. Then, the strained SiGe alloy is made to ease substantially by strained relaxation resulting from defect using an anneal step. Then, a strained semiconductor cap of strained Si etc. is formed on the strained SiGe alloy.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于n型和p型MOSFET器件的半导体结构及其制造方法。 解决方案：形成半导体结构，使得制造n型MOSFET的晶片区域的层结构不同于制造p型MOSFET的晶片区域的层结构。 首先，通过用诸如He的光原子的离子注入在Si含量衬底的前表面上形成损伤区域来制造结构。 然后，在包含损伤区域的Si含量基板上形成应变SiGe合金。 然后，使应变SiGe合金基本上通过使用退火步骤的缺陷导致的应变弛豫来简化。 然后，在应变SiGe合金上形成应变Si等的应变半导体盖。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2004047150A3

公开(公告)日：2004-06-24

申请号：PCT/US0336969

申请日：2003-11-19

Applicant: IBM ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/26506 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/7624 ,  H01L21/76251 ,  Y10S438/933

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearlypseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operatiing with this method is dislocation nucleation at He-inducedplatelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

Abstract translation: 在Si或绝缘体上硅（SOI）衬底上获得薄（小于300nm）应变弛豫Si1-xGex缓冲层的方法。 这些缓冲层具有失配位错的均匀分布，其缓解了应变，表面光滑平滑，以及低穿透位错（TD）密度，即小于10 6 cm 2。 该方法开始于伪晶体或近似假晶Si1-xGex层的生长，即，不具有失配位错的层，然后将其注入He或其它轻元素，随后退火以实现实质的应变弛豫。 用这种方法操作的非常有效的应变松弛机理是位于Si（001）表面Si / Si1-xGex界面以下的He诱导的电镀层（不是气泡）的位错成核。

公开(公告)号：AU2003295647A8

公开(公告)日：2004-06-15

申请号：AU2003295647

申请日：2003-11-19

Applicant: IBM

Inventor： GRILL ALFRED ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：AU2003295647A1

公开(公告)日：2004-06-15

申请号：AU2003295647

申请日：2003-11-19

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：MY127978A

公开(公告)日：2007-01-31

申请号：MYPI20022039

申请日：2002-06-03

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/84 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762

Abstract: A METHOD TO OBTAIN THIN (