公开(公告)号：DE69504252T2

公开(公告)日：1999-04-22

申请号：DE69504252

申请日：1995-06-09

Applicant: IBM

Inventor： FAHEY PAUL MARTIN ,  MORIKADO MUTSUO ,  HAMMERL ERWIN ,  HO HERBERT LEI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763

公开(公告)号：DE69504252D1

公开(公告)日：1998-10-01

申请号：DE69504252

申请日：1995-06-09

Applicant: IBM

Inventor： FAHEY PAUL MARTIN ,  MORIKADO MUTSUO ,  HAMMERL ERWIN ,  HO HERBERT LEI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763

公开(公告)号：JPH11297812A

公开(公告)日：1999-10-29

申请号：JP34271998

申请日：1998-12-02

Applicant: IBM ,  TOSHIBA CORP

Inventor： MANDELMAN JACK A ,  MORIKADO MUTSUO ,  HO HERBERT ,  JEFFREY P GANBINO

IPC: H01L21/76 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To inhibit the formation of a recessed part and to prevent the large change of threshold voltage and off current, by previously removing a nitride liner on the upper part of a side wall with shallow trench element separation. SOLUTION: Resist 17 is etched to the depth of 1000 Å from the surface of a silicon substrate by chemical dry etching(CDE). A silicon nitride liner 16a at the upper part of a shallow trench 14 is removed and whole resist 17a in the shallow trench 14 is removed by CDE. TEOS oxide is embedded in the shallow trench 14, and shallow element separation is formed. A pad nitride film 13 and a pad oxide film 12 on a separated element area are removed, and a gate oxide film and a gate electrode are formed. A source area and a drain area are formed by ion implanting and MOSFET is completed. At the time of removing the pad nitride film 13, a recessed part by the removal of the silicon nitride liner is not formed since the silicon nitride liner is not exposed to a surface.