公开(公告)号：GB2573711B

公开(公告)日：2021-09-29

申请号：GB201911360

申请日：2018-02-17

Applicant: IBM

Inventor： SANJAY MEHTA ,  BALASUBRAMANIAN PRANATHARTHIHARAN ,  ZHENXING BI ,  THAMARAI DEVARAJAN ,  MUTHUMANICKAM SANKARAPANDIAN

IPC: H01L21/28

Abstract: A vertical transport fin field effect transistor (VT FinFET), including one or more vertical fins on a surface of a substrate, an L-shaped or U-shaped spacer trough on the substrate adjacent to at least one of the one or more vertical fins, and a gate dielectric layer on the sidewalls of the at least one of the one or more vertical fins and the L-shaped or U-shaped spacer trough.

公开(公告)号：GB2573711A

公开(公告)日：2019-11-13

申请号：GB201911360

申请日：2018-02-17

Applicant: IBM

Inventor： SANJAY MEHTA ,  BALASUBRAMANIAN PRANATHARTHIHARAN ,  ZHENXING BI ,  THAMARAI DEVARAJAN ,  MUTHUMANICKAM SANKARAPANDIAN

IPC: H01L21/28

Abstract: A vertical transport fin field effect transistor (VT FinFET), including one or more vertical fins on a surface of a substrate, an L-shaped or U-shaped spacer trough on the substrate adjacent to at least one of the one or more vertical fins, and a gate dielectric layer on the sidewalls of the at least one of the one or more vertical fins and the L-shaped or U-shaped spacer trough.