Integrated circuit having monolithic inversely operated transistors
    2.
    发明授权
    Integrated circuit having monolithic inversely operated transistors 失效
    具有单相反相运算晶体管的集成电路

    公开(公告)号:US3628069A

    公开(公告)日:1971-12-14

    申请号:US3628069D

    申请日:1969-04-29

    Applicant: IBM

    Abstract: A planar monolithic circuit is made with a plurality of transistors in a single isolated region in a common emitter circuit configuration. An N-type epitaxial layer constitutes the emitter region into which the base regions of a P-type material are subsequently diffused, and an N-type collector is then diffused into the base regions forming NPN transistors. The Ntype epitaxial region can simultaneously be the common collector region for some of the transistors and the common emitter region for other ones of the transistor in an operative circuit arrangement. Three transistors in a single isolated region can be formed in the shape of an ''''L'''' so that when two of these are interlinked, a rectangle is formed.

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