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    METHOD OF FILLING IN SHALLOW TRENCH
    1.
    发明专利
    METHOD OF FILLING IN SHALLOW TRENCH 失效

    公开(公告)号：JPH10294362A

    公开(公告)日：1998-11-04

    申请号：JP9896898

    申请日：1998-04-10

    Applicant: IBM ,  SIEMENS AG

    Inventor： FIEGL BERNHARD ,  GLASHAUSER WALTER ,  LEVY MAX G ,  NASTASI VICTOR R

    IPC: H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/762

    Abstract: PROBLEM TO BE SOLVED: To enable a process through which a shallow trench is filled in to be enhanced in manufacturing properties and yield by a method wherein an intermediate plane layer is formed, and the lower layer of a thick oxide is selectively etched to deteriorate in planarity. SOLUTION: An upper planar surface is formed so as to be flush with the fill-in upper surface 115 of a fill-in layer 110. A polish stop layer 130 is removed by the use of etching chemicals which are capable of etching both the polish stop layer 130 and a temporary fill-in layer 120, and an intermediate plane surface is kept unremoved leaving the cover part of the temporary fill-in layer 120 unremoved. A part of the fill-in layer 110 located outside the cover part of the temporary fill-in layer 120 is etched as deep as a point shallower than a trench by the use of chemicals which etch the fill-in layer 110 preferentially so as to enable the fill-in upper surface 115 of the fill-in layer 110 located above a reference surface to be flush with the fill-in upper surface 115 of the fill-in layer 110 located in the trench, whereby a planar surface is deteriorated in flatness.

    TRENCH SIDEWALL ISOLATION BY POLYSILICON OXIDATION
    3.
    发明专利
    TRENCH SIDEWALL ISOLATION BY POLYSILICON OXIDATION 未知

    公开(公告)号：CA1286572C

    公开(公告)日：1991-07-23

    申请号：CA534158

    申请日：1987-04-08

    Applicant: IBM

    Inventor： FULTON INGE G ,  MAKRIS JAMES S ,  NASTASI VICTOR R ,  SCADUTO ANTHONY F ,  SHARTEL ANNE C

    IPC: H01L21/76 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763 ,  H01L21/31 ,  H01L21/311

    Abstract: Disclosed is a process of growing a conformal and etch-resistant silicon dioxide on a surface by forming a conformal layer of polysilicon and subjecting the polysilicon to thermal oxidation to completely convert the polysilicon into (poly) silicon oxide. Disclosed also is a method of forming an isolation trench in a semiconductor substrate having a high integrity oxide sidewall. After forming the trench in the substrate surface using a suitable etch mask and RIE, a single (thermal) oxide or dual (thermal) oxide and (CVD) nitride liner is formed on all trench surfaces. A conformal layer of undoped polysilicon is then formed (by. e.g. LPCVD) on the liner. By subjecting to thermal oxidation, the polysilicon is completely converted into a conformal (poly) silicon oxide layer having a thickness about 2.5 times that of the polysilicon layer. The resulting (poly) silicon oxide has the conformality of CVD oxide and the high etch resistance of thermally grown oxide. Alternatively, prior to forming the (poly) silicon oxide, the polysilicon layer is removed from the trench floor and the substrate surface in order to limit volume expansion of the polysilicon to a single direction perpendicular to the trench walls. The trench is filled with oxide, epitaxial silicon, polysilicon, polymers or metal, as desired. For achieving substrate contact through the trench, the trench bottom is opened up by RIE. Polysilicon is deposited with in-situ doping at a high temperature to fill the trench and simultaneously diffuse the dopant from the polysilicon fill into the underlying substrate to form a channel stop.

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