公开(公告)号：JP2002016138A

公开(公告)日：2002-01-18

申请号：JP2001117681

申请日：2001-04-17

Applicant: IBM

Inventor： DALAL HORMAZDYAR M ,  BARENDORA AGARUWARA ,  TERENCE KANE ,  PAUL S MCLOUGHLIN ,  NGUYEN DU ,  RICHARD PROCTER ,  RATHORE HAZARA S ,  YUN-YUU WONG

IPC: C25D5/02 ,  C25D7/12 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection with an improved electromigration life. SOLUTION: The formation method of a via stud comprises a) a process for preparing a substrate 10 with at least an attached first level metal 22, wherein the first level metal is provided inside a first insulator 25, b) a process for attaching a layer of a second insulator 35, c) a process for etching a second insulator by etchant for forming a relevance level, wherein the relevance level has at least one line opening 33 and at least one via opening 34, each opening has a side wall and a bottom part, and a first level metal and a part of a first insulator at a lower side of a via opening are exposed by etching, d) a process for etching a part of the exposed first insulator, and e) a process for attaching a liner 51.

公开(公告)号：JP2001351977A

公开(公告)日：2001-12-21

申请号：JP2001117713

申请日：2001-04-17

Applicant: IBM

Inventor： DALAL HORMAZDYAR M ,  BARENDORA AGARUWARA ,  TERENCE KANE ,  PAUL S MCLOUGHLIN ,  NGUYEN DU ,  RICHARD PROCTER ,  RATHORE HAZARA S ,  YUN-YUU WONG

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection part that has an improved electromigration life. SOLUTION: This formation method of a via stud includes a process that prepares a substrate 10 having first level adhesion metal 20 (a), a process that allows a layer 35 of an insulator to adhere (b), and a process that etches the insulator by a first etchant to form a related level. The related level has a line opening 33 and a via opening 34. Etching by the first etchant exposes the first level metal at the lower side of the via opening and includes a process that etches the exposed first level metal, so that the opening is formed (d) and a process that allows a linear 51 to adhere (e). The liner lines nearly the entire bottom part of the exposed first level metal and nearly the entire sidewall of the opening of the related level other than the nearly the entire sidewall of the first level metal.