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公开(公告)号:DE69016326T2
公开(公告)日:1995-07-13
申请号:DE69016326
申请日:1990-05-12
Applicant: IBM
Inventor: NGUYEN THAO NGOC , STEIN KENNETH JAY , SUN YUAN-CHEN , WEINBERG ZEEV AVRAHAM
IPC: C23C16/30 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , C23C16/34 , C23C16/40
Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.
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公开(公告)号:DE69016326D1
公开(公告)日:1995-03-09
申请号:DE69016326
申请日:1990-05-12
Applicant: IBM
Inventor: NGUYEN THAO NGOC , STEIN KENNETH JAY , SUN YUAN-CHEN , WEINBERG ZEEV AVRAHAM
IPC: C23C16/30 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , C23C16/34 , C23C16/40
Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.
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