公开(公告)号：DE69016326T2

公开(公告)日：1995-07-13

申请号：DE69016326

申请日：1990-05-12

Applicant: IBM

Inventor： NGUYEN THAO NGOC ,  STEIN KENNETH JAY ,  SUN YUAN-CHEN ,  WEINBERG ZEEV AVRAHAM

IPC: C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40

Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.

公开(公告)号：DE69016326D1

公开(公告)日：1995-03-09

申请号：DE69016326

申请日：1990-05-12

Applicant: IBM

Inventor： NGUYEN THAO NGOC ,  STEIN KENNETH JAY ,  SUN YUAN-CHEN ,  WEINBERG ZEEV AVRAHAM

IPC: C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40

Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.