公开(公告)号：DE69016326T2

公开(公告)日：1995-07-13

申请号：DE69016326

申请日：1990-05-12

Applicant: IBM

Inventor： NGUYEN THAO NGOC ,  STEIN KENNETH JAY ,  SUN YUAN-CHEN ,  WEINBERG ZEEV AVRAHAM

IPC: C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40

Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.

公开(公告)号：DE69016326D1

公开(公告)日：1995-03-09

申请号：DE69016326

申请日：1990-05-12

Applicant: IBM

Inventor： NGUYEN THAO NGOC ,  STEIN KENNETH JAY ,  SUN YUAN-CHEN ,  WEINBERG ZEEV AVRAHAM

IPC: C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40

Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.

公开(公告)号：DE3580417D1

公开(公告)日：1990-12-13

申请号：DE3580417

申请日：1985-06-24

Applicant: IBM

Inventor： WEINBERG ZEEV AVRAHAM ,  YOUNG DONALD REEDER

IPC: H01L21/316 ,  H01L21/268 ,  H01L21/28 ,  H01L29/51

Abstract: Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric break-down of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000C.For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000C for a duration on the order of 100 seconds, depending on the oxide thickness.Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.

公开(公告)号：DE3278603D1

公开(公告)日：1988-07-07

申请号：DE3278603

申请日：1982-10-26

Applicant: IBM

Inventor： WEINBERG ZEEV AVRAHAM

IPC: H01L27/112 ,  G11C11/401 ,  G11C11/41 ,  G11C14/00 ,  G11C17/04 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01L27/10 ,  H01L29/60