公开(公告)号：JPH08248425A

公开(公告)日：1996-09-27

申请号：JP1769295

申请日：1995-02-06

Applicant: IBM

Inventor： UDA MITSURU ,  SHINOHARA MASAKI ,  NISHIDA MAMORU

IPC: G02F1/1335 ,  G02F1/1339 ,  G02F1/1362

Abstract: PURPOSE: To provide a liquid crystal display device improved in display luminance by improving the numerical aperture of a sub-pixel and a manufacturing method for the device in the projection type liquid crystal display device using a reflection type liquid crystal light valve and a manufacturing method for the device. CONSTITUTION: According to the above manufacturing method, the liquid crystal display device is constructed by forming a light absorbing layer 26 on a semiconductor substrate 1, forming plural light reflecting films 32 on the light absorbing layer 26 through an insulating film 28, forming an insulating film 36 on the whole surface, applying positive photoresist to the whole surface on the insulating film 36 to form a resist layer, applying exposure to the resist layer from above to form a mask, with the resist layer left on the areas among plural self-aligning light reflecting films 32, and etching the insulating film 36 by the mask to form a column-like spacer 34 on the plural light reflecting films 32.

公开(公告)号：JP2004055986A

公开(公告)日：2004-02-19

申请号：JP2002214058

申请日：2002-07-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： UKAI SHIGEKAZU ,  SASAKI KATSUTO ,  SHOJI REIJIRO ,  FUJIKI TOMOYUKI ,  NISHIDA MAMORU

IPC: H01L23/52 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and the semiconductor device in which Al is prevented from being protruded during annealing.
SOLUTION: A Ti/TiN film 13 is formed over the whole such as an upper surface of a dielectric antireflection film 5, a lateral side of Al wiring 6, an exposed surface of an insulating layer 1, and the like. Continuously, hydrogen annealing is performed to alloy Al of the Al layer 3 with Ti of a Ti layer, a Ti/TiN layer 4 and the Ti/TiN film 13, such that a coating 14 composed of TiAl
3 is formed around the Al wiring 6. A stress of the dielectric antireflection film 5 generated by annealing operates upon an upper part of the Al wiring 6 to help the granular growth of Al along with the coating 14 on the Al wiring 6, but is canceled by a reaction of the coating 14 formed on the side wall of the Al wiring 6. As a result, the granular growth of Al is not helped, such that the protrusion of Al is suppressed.
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