公开(公告)号：JPH11150182A

公开(公告)日：1999-06-02

申请号：JP25779198

申请日：1998-09-11

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  MARK C HAKEY ,  STEVEN J HOLMS ,  DAVID V HOLLACK ,  PAUL A RABIDOU

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To enable actual method for manufacturing an SOI device and a non-SOI device on one wafer, by forming an embedded injection region between stress interface regions formed in a wafer substrate, annealing a wafer, and covering the embedded injection reign into a separation region. SOLUTION: A wafer structure 300 comprises a substrate 310 and a stress interface region 320. The stress interface region 320 is formed by etching the surface of a wafer, oxidizing a layer, growing or sticking an oxide in the etched region, and polishing the surface of wafer. In addition, a displacement region 610 formed on an injection region and an embedded oxide region 620 are provided. The stress interface region 320 absorbs stresses which are normally related to a border between an SOI region and a non-SOI region, on the surface of the wafer structure 300, for enabling manufacture of both an SOI device and a non-SOI device, with allowable level of reliability.