公开(公告)号：SG90085A1

公开(公告)日：2002-07-23

申请号：SG1999006424

申请日：1999-12-17

Applicant: IBM

Inventor： TOSHIHARU FURUKAWA ,  MARK HAKEY ,  STEVEN HOLMES ,  DAVID HORAK ,  PAUL RABIDOUX

IPC: H01L29/78 ,  H01L21/60 ,  H01L21/768 ,  H01L21/318 ,  H01L21/336

Abstract: A method for forming a gate conductor cap in a transistor comprises the steps of: a) forming a polysilicon gate conductor; b) doping the polysilicon gate; c) doping diffusion areas; and d) capping the gate conductor by a nitridation method chosen from among selective nitride deposition and selective surface nitridation. The resulting transistor may comprise a capped gate conductor and borderless diffusion contacts, wherein the capping occurred by a nitridation method chosen from among selective nitride deposition and selective surface nitridation and wherein a portion of the gate conductor is masked during the nitridation method to leave open a contact area for a local interconnect or a gate contact.