公开(公告)号：GB2599329A

公开(公告)日：2022-03-30

申请号：GB202200313

申请日：2020-06-15

Applicant: IBM

Inventor： STEVEN HOLMES ,  DEVENDRA SADANA ,  STEPHEN BEDELL

IPC: A61B5/00

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

公开(公告)号：GB2605096A

公开(公告)日：2022-09-21

申请号：GB202208597

申请日：2020-11-18

Applicant: IBM

Inventor： STEVEN HOLMES ,  BRUCE DORIS ,  MATTHIAS GEORG GOTTWALD ,  RAJIV V JOSHI ,  SUDIPTO CHAKRABORTY

IPC: H01L39/22 ,  G11C11/44

Abstract: A within-chip magnetic field control device is formed in proximity to a Josephson Junction (JJ) structure. The within-chip magnetic field control device includes wiring structures that are located laterally adjacent to the JJ structure. In some embodiments, the magnetic field control device also includes, in addition to the wiring structures, a conductive plate that is connected to the wiring structures and is located beneath the JJ structure. Use of electrical current through the wiring structures induces, either directly or indirectly, a magnetic field into the JJ structure. The strength of the field can be modulated by the amount of current passing through the wiring structures. The magnetic field can be turned off as needed by ceasing to allow current to flow through the wiring structures.

公开(公告)号：SG90085A1

公开(公告)日：2002-07-23

申请号：SG1999006424

申请日：1999-12-17

Applicant: IBM

Inventor： TOSHIHARU FURUKAWA ,  MARK HAKEY ,  STEVEN HOLMES ,  DAVID HORAK ,  PAUL RABIDOUX

IPC: H01L29/78 ,  H01L21/60 ,  H01L21/768 ,  H01L21/318 ,  H01L21/336

Abstract: A method for forming a gate conductor cap in a transistor comprises the steps of: a) forming a polysilicon gate conductor; b) doping the polysilicon gate; c) doping diffusion areas; and d) capping the gate conductor by a nitridation method chosen from among selective nitride deposition and selective surface nitridation. The resulting transistor may comprise a capped gate conductor and borderless diffusion contacts, wherein the capping occurred by a nitridation method chosen from among selective nitride deposition and selective surface nitridation and wherein a portion of the gate conductor is masked during the nitridation method to leave open a contact area for a local interconnect or a gate contact.