公开(公告)号：GB2502480A

公开(公告)日：2013-11-27

申请号：GB201315408

申请日：2012-03-14

Applicant: IBM

Inventor： ERICKSON KARL R ,  PAONE PHIL C ,  PAULSEN DAVID ,  SHEETS JOHN E ,  UHLMANN GREGORY J ,  WILLIAMS KELLY L

IPC: H01L27/108

Abstract: A semiconductor chip (100) has an independently voltage controlled silicon region (110) that is a circuit element useful for controlling capacitor values of eDRAM trench capacitors (140) and threshold voltages of field effect transistors (130) overlying the independently voltage controlled silicon region (110). A bottom, or floor, of the independently voltage controlled silicon region (110) is a deep implant (105) of opposite doping to a doping of a substrate of the independently voltage controlled silicon region (110). A top, or ceiling, of the independently voltage controlled silicon region (110) is a buried oxide (103) implant in the substrate. Sides of the independently voltage controlled silicon region are deep trench isolation (106). Voltage of the independently voltage controlled silicon region (110) is applied through a contact structure (107) formed through the buried oxide (103).

公开(公告)号：GB2502480B

公开(公告)日：2014-04-30

申请号：GB201315408

申请日：2012-03-14

Applicant: IBM

Inventor： ERICKSON KARL R ,  PAONE PHIL C ,  PAULSEN DAVID ,  SHEETS JOHN E ,  UHLMANN GREGORY J ,  WILLIAMS KELLY L

IPC: H01L27/108

Abstract: A semiconductor chip has an independently voltage controlled silicon region that is a circuit element useful for controlling capacitor values of eDRAM trench capacitors and threshold voltages of field effect transistors overlying the independently voltage controlled silicon region. A bottom, or floor, of the independently voltage controlled silicon region is a deep implant of opposite doping to a doping of a substrate of the independently voltage controlled silicon region. A top, or ceiling, of the independently voltage controlled silicon region is a buried oxide implant in the substrate. Sides of the independently voltage controlled silicon region are deep trench isolation. Voltage of the independently voltage controlled silicon region is applied through a contact structure formed through the buried oxide.