公开(公告)号：US3871067A

公开(公告)日：1975-03-18

申请号：US37527873

申请日：1973-06-29

Applicant: IBM

Inventor： BOGARDUS E HAL ,  PERESSINI PETER P ,  REITH TIMOTHY M

IPC: H01L29/78 ,  H01L21/00 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/336 ,  H01L29/00 ,  H01L29/43 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L21/3215 ,  H01L29/00 ,  Y10S438/91

Abstract: Silicon ions are implanted in an aluminum or aluminum-copper film forming an electrode layer over a silicon dioxide layer on a semiconductor. The per cent by weight of silicon implanted into the metal film is greater than the per cent by weight of solid solubility of silicon in aluminum at the maximum processing temperature of the substrate that occurs after implantation. The peak of the implanted ion profile is preferably at the interface between the film and a silicon dioxide layer on the surface of the substrate.

Abstract translation: 将硅离子注入到在半导体上形成二氧化硅层上的电极层的铝或铝 - 铜膜中。 植入金属膜中的硅的重量百分比大于在植入后发生的衬底的最大处理温度下硅在铝中的固体溶解度的重量百分比。 注入离子轮廓的峰优选在膜和衬底表面上的二氧化硅层之间的界面处。

公开(公告)号：FR2375723A1

公开(公告)日：1978-07-21

申请号：FR7735662

申请日：1977-11-18

Applicant: IBM

Inventor： PERESSINI PETER P ,  REITH TIMOTHY M ,  SULLIVAN MICHAEL J

IPC: H01L27/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8222 ,  H01L29/47 ,  H01L29/872 ,  H01L27/04 ,  H01L21/74

Abstract: The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces the area of the chip used by other guardring forming techniques of the prior art. The method involves first opening a hole in an insulator to expose the silicon surface. The Schottky barrier forming metal is then deposited over the insulator and the silicon surface. Heat treatment of the appropriate temperature and time is utilized to form the metal silicide Schottky barrier device. During this device formation, there is a volume shrinkage in the metal silicide which forms a narrow annulus of exposed silicon around the metal silicide contact. The unreacted metal is removed. Ion implantation of ion of opposite polarity to the exposed silicon is imparted to the structure to form a guardring surrounding the Schottky barrier device.

公开(公告)号：CA1007763A

公开(公告)日：1977-03-29

申请号：CA202285

申请日：1974-06-12

Applicant: IBM

Inventor： BOGARDUS E HAL ,  PERESSINI PETER P ,  REITH TIMOTHY M

IPC: H01L29/78 ,  H01L21/00 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/336 ,  H01L29/00 ,  H01L29/43