公开(公告)号：CA1257786A

公开(公告)日：1989-07-25

申请号：CA498313

申请日：1985-12-20

Applicant: IBM

Inventor： FOUTS DAVID P ,  GUPTA DEVANDRA ,  HO PAUL S ,  JASPAL JASVIR S ,  LLOYD JAMES R JR ,  OBERSCHMIDT JAMES M ,  SRIKRISHNAN KRIS V ,  SULLIVAN MICHAEL J

IPC: B23K1/00 ,  B23K35/26 ,  C22C1/00 ,  C22C11/06 ,  H01B1/02 ,  H01B13/00 ,  C22C30/04

Abstract: ELECTROMIGRATION LIFETIME INCREASE OF LEAD BASE ALLOYS Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

公开(公告)号：FR2375723A1

公开(公告)日：1978-07-21

申请号：FR7735662

申请日：1977-11-18

Applicant: IBM

Inventor： PERESSINI PETER P ,  REITH TIMOTHY M ,  SULLIVAN MICHAEL J

IPC: H01L27/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8222 ,  H01L29/47 ,  H01L29/872 ,  H01L27/04 ,  H01L21/74

Abstract: The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces the area of the chip used by other guardring forming techniques of the prior art. The method involves first opening a hole in an insulator to expose the silicon surface. The Schottky barrier forming metal is then deposited over the insulator and the silicon surface. Heat treatment of the appropriate temperature and time is utilized to form the metal silicide Schottky barrier device. During this device formation, there is a volume shrinkage in the metal silicide which forms a narrow annulus of exposed silicon around the metal silicide contact. The unreacted metal is removed. Ion implantation of ion of opposite polarity to the exposed silicon is imparted to the structure to form a guardring surrounding the Schottky barrier device.

公开(公告)号：CA1007760A

公开(公告)日：1977-03-29

申请号：CA202289

申请日：1974-06-12

Applicant: IBM

Inventor： HERDZIK RICHARD J ,  JEANNOTTE DEXTER A ,  PETERSON GERALD W ,  SULLIVAN MICHAEL J

IPC: H01L21/60 ,  H01L23/485