公开(公告)号：DE3780743T2

公开(公告)日：1993-03-11

申请号：DE3780743

申请日：1987-09-22

Applicant: IBM

Inventor： NANDA MADAN MOHAN ,  PETERMAN STEVEN LOUIS ,  STANASOLOVICH DAVID

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L21/31 ,  H01L21/60

Abstract: A process for defining vias through a polyimide and silicon nitride layer: 1. Providing a substrate having a first layer of silicon nitride and a second layer of polyimide; 2. Depositing a layer of photoresist capable of producing negatively sloped walls; 3. Lithographically defining a pattern of vias in the photoresist; 4. Developing the photoresist to produce a pattern of vias having negatively sloped walls; 5. Etching the polyimide layer using the developed photoresist layer as an etch mask with a CF4/O2 gas mixture; and 6. Etching the silicon nitride layer using the etched polyimide layer as an etch mask with a CF4/H2 gas mixture. y

公开(公告)号：DE3780743D1

公开(公告)日：1992-09-03

申请号：DE3780743

申请日：1987-09-22

Applicant: IBM

Inventor： NANDA MADAN MOHAN ,  PETERMAN STEVEN LOUIS ,  STANASOLOVICH DAVID

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L21/31 ,  H01L21/60

Abstract: A process for defining vias through a polyimide and silicon nitride layer: 1. Providing a substrate having a first layer of silicon nitride and a second layer of polyimide; 2. Depositing a layer of photoresist capable of producing negatively sloped walls; 3. Lithographically defining a pattern of vias in the photoresist; 4. Developing the photoresist to produce a pattern of vias having negatively sloped walls; 5. Etching the polyimide layer using the developed photoresist layer as an etch mask with a CF4/O2 gas mixture; and 6. Etching the silicon nitride layer using the etched polyimide layer as an etch mask with a CF4/H2 gas mixture. y