公开(公告)号：CA1139015A

公开(公告)日：1983-01-04

申请号：CA349764

申请日：1980-04-14

Applicant: IBM

Inventor： BARILE CONRAD A ,  GOTH GEORGE R ,  MAKRIS JAMES S ,  NAGARAJAN ARUNACHALA ,  RAHEJA RAJ K

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/265 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/07 ,  H01L29/417 ,  H01L21/22

Abstract: BIPOLAR TRANSISTOR FABRICATION PROCESS WITH AN ION IMPLANTED EMITTER A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layers to both the base contact and the emitter regions using a resist mask. These regions are than protected by resist and the collector contact window is opened through the remainder of the silicon dioxide layer to the reach through region. A screen oxide is grown in all the exposed areas after removal of the resist mask. A resist mask is applied which covers only the base and Schottky anode regions. Arsenic is then implanted through the exposed screened areas followed by an etch back step to remove the top damaged layer. With some remaining screen oxide serving as a cap, the emitter drive-in is done. FI 9-78-055