公开(公告)号：JP2001244441A

公开(公告)日：2001-09-07

申请号：JP2001007860

申请日：2001-01-16

Applicant: IBM

Inventor： CLEVENGER LAWRENCE A ,  RAMA DEIVAKARUMI ,  LOUIS RUUCHEN SHEW ,  YUJUMU RI

IPC: H01L23/522 ,  H01L21/225 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide an NMOS structure and its manufacturing method for solving a problem of junctional yield in a conventional NMOS drive circuit. SOLUTION: A drive circuit in N-channel metallic oxide film semiconductor(NMOS) includes a boost gate stack formed on a substrate and having source and drain formed in low density N-type implantation step, and an N-drive circuit joined with the boost gate stack.