公开(公告)号：JP2009235414A

公开(公告)日：2009-10-15

申请号：JP2009138295

申请日：2009-06-09

Applicant: Internatl Business Mach Corp ,  Sumitomo Bakelite Co Ltd ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  住友ベークライト株式会社

Inventor： JAYARAMAN SAIKUMAR ,  GOODALL BRIAN L ,  RHODES LARRY F ,  SHICK ROBERT A ,  VICARI RICHARD ,  ROBERT D ALLEN ,  JULIAN OPITZ ,  RATONAMU SOORIYAKUMARAN ,  WALLOW THOMAS

IPC: C08F232/00 ,  C08F4/80 ,  C08F32/08 ,  C08F232/08 ,  C08G61/06 ,  C08G61/08 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC classification number: C08F232/08 ,  C08G61/08 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a polycyclic polymer and a polycyclic resist composition useful for a photoresist composition transparent to a short wavelength of image focusing irradiation, and having resistance in a dry etching method. SOLUTION: The present invention uses the resist composition comprising the polycyclic polymer containing repeated aromatic pendant groups along a polymer principal chain. The polymer exhibits a light transparent property with respect to a deep UV wavelength, and is useful for an application to a high resolution photolithography. The polymer is useful, in particular, in chemically amplified positive and negative type gradation resists. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可用于对短波长图像聚焦照射透明的光致抗蚀剂组合物的多环聚合物和多环抗蚀剂组合物，并且在干蚀刻方法中具有电阻。 解决方案：本发明使用包含沿着聚合物主链含有重复芳族侧基的多环聚合物的抗蚀剂组合物。 该聚合物相对于深UV波长显示出透光性，并且可用于高分辨率光刻的应用。 该聚合物特别适用于化学放大的正型和负型层压抗蚀剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006243727A

公开(公告)日：2006-09-14

申请号：JP2006051898

申请日：2006-02-28

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RATONAMU SOORIYAKUMARAN ,  TRUONG HOA D

IPC: G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  Y10S430/106

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition having high resolution using a non-polymeric material. SOLUTION: A molecular resist composition containing a substituted oligosaccharide substituted with one acid-cleavable -OR group is provided. The substituted oligosaccharide contains 2 to 10 monosaccharides. The molecular resist is initially insoluble in a developer which may be an aqueous alkali solution or essentially consist of water, however, the resist may become soluble in a developer upon exposure to radiation having a wavelength of 193 nm or less and a post-exposure bake temperature from about room temperature to about 110°C. The resist material can render a developed image with a line/spacing not greater than 120 nm when the developer essentially consists of water or an aqueous alkali solution. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供使用非聚合材料的高分辨率的抗蚀剂组合物。 解决方案：提供含有被一个酸可切割-OR基团取代的取代的寡糖的分子抗蚀剂组合物。 取代的寡糖含有2〜10个单糖。 分子抗蚀剂最初不溶于可以是碱性水溶液或基本由水组成的显影剂，然而，当暴露于波长为193nm或更小的辐射和曝光后烘烤时，抗蚀剂可能变得可溶于显影剂 温度约为室温至约110℃。 当显影剂基本上由水或碱性水溶液组成时，抗蚀剂材料可以使线/间距不大于120nm的显影图像。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2012042976A

公开(公告)日：2012-03-01

申请号：JP2011241429

申请日：2011-11-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RATONAMU SOORIYAKUMARAN ,  KHOA D TRUONG

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  Y10S430/106

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition having high definition using a non-polymer based material.SOLUTION: A molecular resist composition containing a substituted oligosaccharide substituted with one acid-cleavable -OR group is provided. The substituted oligosaccharide contains 2 to 10 monosaccharides. The molecular resist is initially insoluble in developer which may be an aqueous alkali solution or essentially consist of water, however, the resist may become soluble in the developer upon exposure to radioactive ray having a wavelength of 193 nm or less and post-exposure heating temperature from about room temperature to about 110°C. The resist material of the present invention can make a developed image with a line/spacing not greater than 120 nm when the developer essentially consists of the water or the aqueous alkali solution.

Abstract translation: 要解决的问题：使用非聚合物基材料提供具有高清晰度的抗蚀剂组合物。 解决方案：提供含有被一个酸可切割-OR基团取代的取代的寡糖的分子抗蚀剂组合物。 取代的寡糖含有2〜10个单糖。 分子抗蚀剂最初不溶于显影剂，其可以是碱性水溶液或基本上由水组成，然而，当暴露于波长为193nm或更小的放射线和曝光后加热温度时，抗蚀剂可能变得可溶于显影剂 从约室温至约110℃。 当显影剂基本上由水或碱性水溶液组成时，本发明的抗蚀剂材料可以使线/间距不大于120nm的显影图像。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2004339522A

公开(公告)日：2004-12-02

申请号：JP2004181278

申请日：2004-06-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  DONALD CLIFFORD HOFER ,  RATONAMU SOORIYAKUMARAN ,  WALLRAFF GREGORY MICHAEL

IPC: C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

Abstract: PROBLEM TO BE SOLVED: To obtain a polymerizable monomer having Si-containing groups, transparent at 193 nm and ethylenically unsaturated group.
SOLUTION: The polymerizable monomer has the Si-containing groups separated each other by a group X transparent at 193 nm and having no reactivity and has the ethylenically unsaturated group. Polymers obtained from the monomer can be used in processes for forming sub-100 nm images by using a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the production of integrated circuits.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了获得具有含Si基团的可聚合单体，在193nm下是透明的，具有烯属不饱和基团。 解决方案：可聚合单体具有通过在193nm透明且不具有反应性的基团X彼此分离并具有烯键式不饱和基团。 从单体获得的聚合物可用于通过使用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。 双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。 双层抗蚀剂可用于集成电路的生产。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2006251794A

公开(公告)日：2006-09-21

申请号：JP2006048025

申请日：2006-02-24

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RATONAMU SOORIYAKUMARAN ,  SUNDBERG LINDA KARIN ,  ALLEN ROBERT DAVID

IPC: G03F7/11 ,  C08G77/38 ,  C09D183/04 ,  C09D183/05 ,  C09D183/08 ,  C09D183/10 ,  G03F7/075 ,  H01L21/027

CPC classification number: C08G77/04 ,  C08G77/045 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist topcoat extremely suitable for photolithography and a liquid immersion photolithographic system. SOLUTION: The topcoat consists of a composition including functionalized polyhedral oligomeric silsesquioxane derivatives of formulae T m R3 , wherein m is equal to 8, 10 or 12 and Q n M n R1, R2, R3 , (wherein n is equal to 8, 10, 12). The functional groups preferably include aqueous base soluble moieties. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供非常适合于光刻的光致抗蚀剂外涂层和液浸光刻系统。 解决方案：面漆由包含官能化的式T的三面体低聚倍半硅氧烷衍生物（其中m等于8,10或12和Q < SB> n R1，R2，R3 （其中n等于8,10,12）。 官能团优选包括碱水溶性部分。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005115380A

公开(公告)日：2005-04-28

申请号：JP2004291846

申请日：2004-10-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MOREAU WAYNE ,  PFEIFFER DIRK ,  RATONAMU SOORIYAKUMARAN

IPC: G03F7/11 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0754 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a new and improved polymer composition which can be used for photolithography and has similar etching properties to those of Si.
SOLUTION: An antireflection composition characterized in the presence of a Si-containing polymer having a pendant chromophore moiety is regarded as an antireflection coating/hard mask composition useful in lithographic processes. The composition provides significant optical characteristics, mechanical properties and etching selectivity and is applicable by a spin-on coating method. The composition is particularly useful in lithographic processes used to configure an underlay material layer on a substrate, in particular, a metal layer or a semiconductor layer.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供可用于光刻的新的和改进的聚合物组合物，并具有与Si相似的蚀刻性能。 解决方案：特征在于存在具有侧发色团部分的含Si聚合物的抗反射组合物被认为是可用于光刻工艺的抗反射涂层/硬掩模组合物。 该组合物提供显着的光学特性，机械性能和蚀刻选择性，并且可以通过旋涂法来应用。 该组合物在用于在衬底，特别是金属层或半导体层上构造衬底材料层的光刻工艺中特别有用。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001288224A

公开(公告)日：2001-10-16

申请号：JP2001051017

申请日：2001-02-26

Applicant: IBM

Inventor： PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  DONALD CLIFFORD HOFER ,  RATONAMU SOORIYAKUMARAN ,  WALLRAFF GREGORY MICHAEL

IPC: C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  C08K5/541

Abstract: PROBLEM TO BE SOLVED: To provide a polymerizable monomer which has an ethylenically unsaturated group and silicon-containing groups transparent at 193 nm. SOLUTION: This polymerizable monomer has a polymerizable ethylenically unsaturated group and a plurality of silicon-containing groups separated from each other by groups X having no reactivity and transparent at 193 nm. A polymer obtained from the monomer can be used in the process for forming an image of 100 nm or lower by using a chemically amplified radiation-sensitive bilayer resist. The bilayer resist is arranged on a substrate and comprises (1) an upper image formation layer containing a radiation-sensitive acid-generating agent and (2) an organic lower layer. This bilayer resist can be used for producing integrated circuits.