公开(公告)号：JP2002244300A

公开(公告)日：2002-08-30

申请号：JP2002016785

申请日：2002-01-25

Applicant: IBM

Inventor： PHILIP JOE BROCK ,  DAWSON DANIEL JOSEPH ,  ITO HIROSHI ,  WALLRAFF GREGORY MICHAEL

IPC: G03F7/025 ,  C08F20/04 ,  C08F20/10 ,  C08F20/42 ,  C08F20/54 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic photoresist composition usable as a chemically amplifier photoresist. SOLUTION: The composition is substantially transparent to deep UV, that is, radiation of

公开(公告)号：JP2001288224A

公开(公告)日：2001-10-16

申请号：JP2001051017

申请日：2001-02-26

Applicant: IBM

Inventor： PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  DONALD CLIFFORD HOFER ,  RATONAMU SOORIYAKUMARAN ,  WALLRAFF GREGORY MICHAEL

IPC: C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  C08K5/541

Abstract: PROBLEM TO BE SOLVED: To provide a polymerizable monomer which has an ethylenically unsaturated group and silicon-containing groups transparent at 193 nm. SOLUTION: This polymerizable monomer has a polymerizable ethylenically unsaturated group and a plurality of silicon-containing groups separated from each other by groups X having no reactivity and transparent at 193 nm. A polymer obtained from the monomer can be used in the process for forming an image of 100 nm or lower by using a chemically amplified radiation-sensitive bilayer resist. The bilayer resist is arranged on a substrate and comprises (1) an upper image formation layer containing a radiation-sensitive acid-generating agent and (2) an organic lower layer. This bilayer resist can be used for producing integrated circuits.

公开(公告)号：JP2004339522A

公开(公告)日：2004-12-02

申请号：JP2004181278

申请日：2004-06-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  DONALD CLIFFORD HOFER ,  RATONAMU SOORIYAKUMARAN ,  WALLRAFF GREGORY MICHAEL

IPC: C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

Abstract: PROBLEM TO BE SOLVED: To obtain a polymerizable monomer having Si-containing groups, transparent at 193 nm and ethylenically unsaturated group.
SOLUTION: The polymerizable monomer has the Si-containing groups separated each other by a group X transparent at 193 nm and having no reactivity and has the ethylenically unsaturated group. Polymers obtained from the monomer can be used in processes for forming sub-100 nm images by using a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the production of integrated circuits.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了获得具有含Si基团的可聚合单体，在193nm下是透明的，具有烯属不饱和基团。 解决方案：可聚合单体具有通过在193nm透明且不具有反应性的基团X彼此分离并具有烯键式不饱和基团。 从单体获得的聚合物可用于通过使用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。 双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。 双层抗蚀剂可用于集成电路的生产。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002014472A

公开(公告)日：2002-01-18

申请号：JP2001130763

申请日：2001-04-27

Applicant: IBM

Inventor： WALLOW THOMAS I ,  ROBERT D ALLEN ,  PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  TRUONG HOA DAO ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition capable of ensuring suitability to high resolution lithography using imaging radiation of 193 nm and to provide a lithographic process using the photoresist composition. SOLUTION: An acid catalyzed positive photoresist composition is provided by using a resist composition containing a cycloolefin polymer with a cydoolefin monomer having a lactone moiety. The photoresist can be imaged with radiation of 193 nm and is developed to form a photoresist structure with improved development characteristics and improved etching resistance. The monomer has no oxygen atom between the lactone moiety and a cycloolefin ring. The lactone moiety is appropriately spirolactone (5- or 6-membered ring) which bonds directly to the cycloolefin ring.

公开(公告)号：JP2001356482A

公开(公告)日：2001-12-26

申请号：JP2001130713

申请日：2001-04-27

Applicant: IBM

Inventor： ROBERT D ALLEN ,  PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  VARANASI PUSHKARA RAO

IPC: C08F222/06 ,  C08F222/40 ,  C08F232/00 ,  C08K5/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition having so improved resolution as to enable high resolution lithography performance using imaging radiation of 193 nm. SOLUTION: The photoresist composition is obtained by using an imaging copolymer so as to improve a known alternating copolymer-base photoresist. The imaging copolymer is characterized by the presence of at least a third monomer which enhances the resolution of the photoresist. The performance of the composition is further improved by using a bulky acid active protective group on the imaging copolymer. An alkyl functional cyclicolefin is particularly suitable for use as the third monomer.