公开(公告)号：JPH10256551A

公开(公告)日：1998-09-25

申请号：JP3989398

申请日：1998-02-23

Applicant: IBM

Inventor： DONALD C WHEELER ,  JEFFLE P GANVINO ,  LEWIS L TSU ,  MANDELMAN JACK A ,  REBECCA D MI

IPC: H01L21/027 ,  H01L21/266 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a new FET (asymmetrical field effect transistor) with improved reliability and performance. SOLUTION: An asymmetrical field effect transistor includes a first region 54 to be a source, a second region 53 to be a drain, a thin gate oxide 52 and a gate electrode 51. The gate electrode is asymmetrical and one of its side wall is sloped. The second region 53 extends under the sloped side wall 56. The part of the second region 53 extending under the gate electrode 51 is doped more lightly than the rest of the second region 53. The second region 53 is further provided with a sloped junction edge 58 under the gate electrode 51.

公开(公告)号：JPH10256394A

公开(公告)日：1998-09-25

申请号：JP3865098

申请日：1998-02-20

Applicant: IBM

Inventor： DONALD C WHEELER ,  LEWIS L SUU ,  MANDELMAN JACK A ,  REBECCA D MI

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a new structure, especially a CMOS structure, decreasing off-state current of a device. SOLUTION: A MOS transistor 70 contains two trench isolation regions 78 adjoining an active region 79. The trench isolation regions 78 is disposed on the opposite sides of the active region 79 so that side walls 80 of each trench acts as an interface for the active region 79, and at least one of the side walls 80 has inclination of 90-150 deg.. The trench isolation regions 78, a source injection region and a drain injection region 78 surround all sides of the active region 79.