公开(公告)号：JP2001024060A

公开(公告)日：2001-01-26

申请号：JP2000139087

申请日：2000-05-11

Applicant: IBM

Inventor： ROBERT COOK ,  GRECO STEPHEN E ,  JOHN P HUMMEL ,  JOYCE RYUU ,  MCGAHAY VINCENT J ,  REBECCA MEE ,  SRIVASTAVA KAMALESH

IPC: G03F7/40 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To prevent invasion with a developer of SSQ dielectric material during the resist pattern formation by forming another resist pattern on the surface of an intermediate material, and then removing a part of the intermediate material and the other part of such material depending on the other resist pattern. SOLUTION: An etching process is executed to form an aperture 22' to a thin oxide layer 16 as an intermediate material depending on a pattern 20 generated in the resist 18 and also to form a recess 22 to the SSQ (silsesquioxane material) layer 14. The other resist layer 24 is coated on the surface of the oxide layer 16. This resist layer 24 is then exposed and developed to form a resist pattern 26. Moreover, depending on the pattern 26, it is then developed to generate an undercut 28' of a via resist 24. Thereafter, the via 27 is formed with the unisotropic etching process. As a result, while the resist pattern 26 is formed, the pattern is never invaded with the developer owing to the SSQ material.