公开(公告)号：DE2422120A1

公开(公告)日：1975-01-23

申请号：DE2422120

申请日：1974-05-08

Applicant: IBM

Inventor： BOGARDUS E HAL ,  PERESSINI PETER ,  REITH TIMOTHY MARTIN

IPC: H01L29/78 ,  H01L21/00 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/336 ,  H01L29/00 ,  H01L29/43

公开(公告)号：DE2754397A1

公开(公告)日：1978-06-29

申请号：DE2754397

申请日：1977-12-07

Applicant: IBM

Inventor： PERESSINI PETER PAUL ,  REITH TIMOTHY MARTIN ,  SULLIVAN MICHAEL JAMES

IPC: H01L27/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8222 ,  H01L29/47 ,  H01L29/872 ,  H01L29/48

Abstract: The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces the area of the chip used by other guardring forming techniques of the prior art. The method involves first opening a hole in an insulator to expose the silicon surface. The Schottky barrier forming metal is then deposited over the insulator and the silicon surface. Heat treatment of the appropriate temperature and time is utilized to form the metal silicide Schottky barrier device. During this device formation, there is a volume shrinkage in the metal silicide which forms a narrow annulus of exposed silicon around the metal silicide contact. The unreacted metal is removed. Ion implantation of ion of opposite polarity to the exposed silicon is imparted to the structure to form a guardring surrounding the Schottky barrier device.

公开(公告)号：DE3786245D1

公开(公告)日：1993-07-22

申请号：DE3786245

申请日：1987-11-24

Applicant: IBM

Inventor： JUBB NANCY JANE ,  REITH TIMOTHY MARTIN

IPC: C22C38/00 ,  C22C19/03 ,  C23C14/06 ,  G11B5/31 ,  H01F10/14 ,  H01F41/18

Abstract: A thin (eg 6 micrometers thick) magnetic pole piece (eg 11) is made by co-sputtering onto a substrate (eg 10) NiFe and a non-fractionating compound (for example Al2O3) of a metal and a non-metal in such a manner that the deposited material is of a single phase.

公开(公告)号：DE3786245T2

公开(公告)日：1993-12-02

申请号：DE3786245

申请日：1987-11-24

Applicant: IBM

Inventor： JUBB NANCY JANE ,  REITH TIMOTHY MARTIN

IPC: C22C38/00 ,  C22C19/03 ,  C23C14/06 ,  G11B5/31 ,  H01F10/14 ,  H01F41/18

Abstract: A thin (eg 6 micrometers thick) magnetic pole piece (eg 11) is made by co-sputtering onto a substrate (eg 10) NiFe and a non-fractionating compound (for example Al2O3) of a metal and a non-metal in such a manner that the deposited material is of a single phase.

公开(公告)号：SG87030A1

公开(公告)日：2002-03-19

申请号：SG1999002139

申请日：1999-05-07

Applicant: IBM

Inventor： MARINERO ERNESTO ESTEBAN ,  YORK BRIAN RODERICK ,  REITH TIMOTHY MARTIN

IPC: G11B5/64 ,  G11B5/66

Abstract: A thin film disk and a disk drive using the thin film disk are described. The disk has a thin film magnetic layer composed of small acicular grains having an average aspect ratio greater than one which results in improved recording performance. The development of the acicularity is aided through the crystal structure having anisotropic inplane stress with a radial stress being less than a tangential stress. The preferred magnetic material is an alloy cobalt which includes a glass forming material such as boron, boron oxide, silicon, silicon oxide, carbon, phosphorus, etc. The typical hcp unit cells form acicular grains with a tendency for the C-axis to be orthogonal to a long axis of the acicular grains. Preferably the C-axis of the grains is oriented along the circumferential direction of the disk. Preferably the underlayer is sputtered deposited using negative bias.