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    Method of manufacturing data track to be used in magnetic shift register memory device
    1.
    发明专利
    Method of manufacturing data track to be used in magnetic shift register memory device 审中-公开
    在磁移位置存储器件中制造要使用的数据轨迹的方法

    公开(公告)号：JP2006237183A

    公开(公告)日：2006-09-07

    申请号：JP2005048214

    申请日：2005-02-24

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： CHEN TZE-CHIANG ,  PARKIN STUART S P

    IPC: H01L27/105 ,  H01F10/16 ,  H01L21/8246 ,  H01L29/82

    CPC classification number: G11C19/0808 ,  G11C11/14

    Abstract: PROBLEM TO BE SOLVED: To provide an improved method of manufacturing a magnetic data track necessary for building a magnetic shift register memory device. SOLUTION: The magnetic data track can be manufactured by forming a multilayered stack made by stacking a dielectric material and/or a silicon layer alternately. A via having a height of about 10 microns and a cross section of about 100 nm in length and width is formed in the multilayered stack of alternate layers by etching. Then, the via is filled up with a layer of alternately stacked ferromagnetic material and ferrimagnetic metal by electrical plating. The ferromagnetic material layer and the ferrimagnetic material layer are formed of magnetic materials having a different magnetization characteristic, a different magnetic exchange characteristic, or a different magnetic anisotropy. Due to the different magnetic characteristics, a magnetic wall can be fixed to the boundary between these layers. The magnetic wall is formed by the ferromagnetic material occurring on a notch or projection along the wall of the via or by the discontinuity in the ferromagnetic material. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种制造磁性移位寄存器存储器件所需的磁数据轨道的改进方法。 解决方案：可以通过形成通过交替堆叠电介质材料和/或硅层而制成的多层堆叠来制造磁数据轨道。 通过蚀刻在交替层的多层堆叠中形成具有约10微米的高度和长度和宽度约100nm的横截面的通孔。 然后，通过电镀填充一层交替层叠的铁磁材料和铁磁性金属。 铁磁材料层和铁磁材料层由具有不同磁化特性，不同磁交换特性或不同磁各向异性的磁性材料形成。 由于不同的磁特性，磁壁可以固定在这些层之间的边界上。 磁性壁由铁磁材料形成，该铁磁材料沿着通孔的壁的凹口或突起或由铁磁材料中的不连续性形成。 版权所有（C）2006，JPO＆NCIPI

    Magnetspin-Schieberegisterspeicher
    3.
    发明专利
    Magnetspin-Schieberegisterspeicher 未知

    公开(公告)号：DE112011102316B4

    公开(公告)日：2015-12-31

    申请号：DE112011102316

    申请日：2011-06-02

    Applicant: IBM

    Inventor： PARKIN STUART S P ,  JOSEPH ERIC A ,  ROTHWELL MARY B

    IPC: G11C19/14 ,  G11C11/14 ,  G11C19/08

    Abstract: Verfahren zum Bilden einer Speichereinheit (100), wobei das Verfahren beinhaltet: Bilden eines Hohlraums (201) in einem Substrat (200), der eine innere Oberfläche (202) mit einem wellenförmigen Profil aufweist; Abscheiden eines ferromagnetischen Materials in dem Hohlraum (201); Bilden eines Leseelements (20) auf dem Substrat (200) nahe einem Teil des ferromagnetischen Materials; und Bilden eines Schreibelements (15) auf dem Substrat (200) nahe einem zweiten Teil des ferromagnetischen Materials.

    MAGNETORESISTIVE SENSOR BASED ON THE SPIN VALVE EFFECT
    4.
    发明专利
    MAGNETORESISTIVE SENSOR BASED ON THE SPIN VALVE EFFECT 未知

    公开(公告)号：CA2054580A1

    公开(公告)日：1992-06-12

    申请号：CA2054580

    申请日：1991-10-31

    Applicant: IBM

    Inventor： DIENY BERNARD ,  GURNEY BRUCE A ,  LAMBERT STEVEN E ,  MAURI DANIELE ,  PARKIN STUART S P ,  SPERIOSU VIRGIL S ,  WILHOIT DENNIS R

    IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G01R33/02 ,  G11B5/02

    Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

    Magnetspin-Schieberegisterspeicher
    6.
    发明专利
    Magnetspin-Schieberegisterspeicher 未知

    公开(公告)号：DE112011102316T5

    公开(公告)日：2013-06-06

    申请号：DE112011102316

    申请日：2011-06-02

    Applicant: IBM

    Inventor： PARKIN STUART S P ,  JOSEPH ERIC A ,  ROTHWELL MARY B

    IPC: G11C19/00

    Abstract: Ein Verfahren zum Bilden einer Speichereinheit beinhaltet das Bilden eines Hohlraums in einem Substrat, der eine innere Oberfläche mit einem wellenförmigen Profil aufweist, das Abscheiden eines ferromagnetischen Materials in dem Hohlraum, das Bilden eines Leseelements auf dem Substrat nahe einem Teil des ferromagnetischen Materials und das Bilden eines Schreibelements auf dem Substrat nahe einem zweiten Teil des ferromagnetischen Materials.

    8.
    发明专利
    未知

    公开(公告)号：MX167372B

    公开(公告)日：1993-03-19

    申请号：MX1054288

    申请日：1988-02-24

    Applicant: IBM

    Inventor： LIM GRACE S ,  PARKIN STUART S P ,  BEYERS ROBERT B ,  ENGLER EDWARD M ,  GRANT PAUL M

    IPC: C01G1/00 ,  C01G3/00 ,  C04B35/00 ,  C04B35/45 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24 ,  H03B15/00

    Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.

    MAGNETORESISTIVE SENSOR BASED ON OSCILLATIONS IN THE MAGNETORESISTANCE
    9.
    发明专利
    MAGNETORESISTIVE SENSOR BASED ON OSCILLATIONS IN THE MAGNETORESISTANCE 未知

    公开(公告)号：CA2060561A1

    公开(公告)日：1992-08-09

    申请号：CA2060561

    申请日：1992-02-03

    Applicant: IBM

    Inventor： PARKIN STUART S P ,  ROCHE KEVIN P

    IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10

    Abstract: Described is a magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material (12) and copper (14). The ferromagnetic material and the copper form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed. Also described is a sensor having a quadlayer structure which comprises alternating layers of a first and second ferromagnetic material and a non-magnetic metallic material.

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