公开(公告)号：JP2000174027A

公开(公告)日：2000-06-23

申请号：JP34316599

申请日：1999-12-02

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  CABRAL JR CYRIL ,  CHRISTOPHER CARL PARKS ,  RODBELL KENNETH P ,  ROGER EN-RUEN TSUAI

IPC: H01L21/3205 ,  H01L21/265 ,  H01L21/283 ,  H01L21/288 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To improve the electromigration resistance characteristic by depositing a Cu seed layer to a housing region and implanting ions of a impurity selected among C, O, Cl, S and N in the seed layer. SOLUTION: In a simple damascene, a dopant ion is implanted in a Cu-rich conductive layer 90 before planarizing, the dopant is selected among C, O, Cl, S and N, a silicon nitride etch-planarize stop layer 92, a barrier layer 94 and a Cu seed layer 96 are formed in trenches formed on a semiconductor wafer or the side walls and top faces of openings, the ion implanting in the Cu conductive layer 90 is made in the single damascene process after the planarize stop, and the dopant brings about a microstructure unique to a conductor contg. large crystal grains, thereby improving the electromigration resistance characteristic.

公开(公告)号：JP2004158897A

公开(公告)日：2004-06-03

申请号：JP2004063897

申请日：2004-03-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  CABRAL JR CYRIL ,  CHRISTOPHER CARL PARKS ,  RODBELL KENNETH P ,  ROGER EN-RUEN TSUAI

IPC: H01L21/3205 ,  H01L21/265 ,  H01L21/283 ,  H01L21/288 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To improve electromigration resistance of a copper electric conductor. SOLUTION: Impurities which improve the electromigraion resistance are added to the copper electric conductor after copper composition is deposited on inside a holding place. The impurities are C, O, C1, S and N, and a concentration level of the impurities is about 0.01ppm or about 1,000ppm. The impurities are made by electroplating copper after copper seed is deposited on inside the holding place and ion is implanted, or by electrodepositing the copper composition including the impurities and diffusing the impurities inside the copper seed layer after the copper layer is deposited, or by implanting dopant ion after the deposition of a barrier layer and then depositing the copper seed layer. Annealing is performed for diffusion. After the copper electric conductor is planarized, at least one element is ion-implanted into these surface layers. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提高铜导体的电迁移能力。 解决方案：将铜组合物沉积在保持位置之后，将改善耐电阻性的杂质加入到铜导电体中。 杂质为C，O，Cl，S和N，杂质浓度为约0.01ppm或约1,000ppm。 杂质通过将铜种子沉积在保持位置的内部并离子注入之后，或者通过电沉积包含杂质的铜组合物并在铜层沉积之后在铜籽晶层内扩散杂质，或通过植入 在沉积阻挡层之后然后沉积铜籽晶层的掺杂剂离子。 退火进行扩散。 在铜电导体平坦化之后，将至少一种元素离子注入到这些表面层中。 版权所有（C）2004，JPO