公开(公告)号：DE3379129D1

公开(公告)日：1989-03-09

申请号：DE3379129

申请日：1983-11-03

Applicant: IBM

Inventor： KASPRZAK LUCIAN ALEXANDER ,  RYAN CHARLES TIMOTHY ,  SCHEUERLEIN ROY EDWIN

IPC: G11C29/00 ,  G01R31/28 ,  G11C29/48 ,  G11C29/50

Abstract: A random access memory, a method of manufacturing a random access memory, and a method of testing a random access memory in which separate operating voltage terminal pads (35, 36) are provided for the memory cell arrays (11, 12) and peripheral circuits (14, 15) of the memory. By providing separate operating voltage terminal pads (35, 36), different operating voltages can be applied to the arrays (11, 12) of cells and to the peripheral circuits (14,15) during a burn-in procedure. In this manner, the burn-in procedure is greatly accelerated without danger of damage to the peripheral circuits (14, 15) due to exceeding the sustaining voltages of the transistor devices of the peripheral circuits during burn-in.