公开(公告)号：DE3379129D1

公开(公告)日：1989-03-09

申请号：DE3379129

申请日：1983-11-03

Applicant: IBM

Inventor： KASPRZAK LUCIAN ALEXANDER ,  RYAN CHARLES TIMOTHY ,  SCHEUERLEIN ROY EDWIN

IPC: G11C29/00 ,  G01R31/28 ,  G11C29/48 ,  G11C29/50

Abstract: A random access memory, a method of manufacturing a random access memory, and a method of testing a random access memory in which separate operating voltage terminal pads (35, 36) are provided for the memory cell arrays (11, 12) and peripheral circuits (14, 15) of the memory. By providing separate operating voltage terminal pads (35, 36), different operating voltages can be applied to the arrays (11, 12) of cells and to the peripheral circuits (14,15) during a burn-in procedure. In this manner, the burn-in procedure is greatly accelerated without danger of damage to the peripheral circuits (14, 15) due to exceeding the sustaining voltages of the transistor devices of the peripheral circuits during burn-in.

公开(公告)号：DE2860169D1

公开(公告)日：1980-12-18

申请号：DE2860169

申请日：1978-07-27

Applicant: IBM

Inventor： DALAL HORMAZDYAR MINOCHER ,  GHAFGHAICHI MAJID ,  KASPRZAK LUCIAN ALEXANDER ,  WIMPFHEIMER HANS

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L21/60 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/40 ,  H01L23/48

Abstract: A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.