公开(公告)号：DE3854113T2

公开(公告)日：1996-02-29

申请号：DE3854113

申请日：1988-09-27

Applicant: IBM

Inventor： DESILETS BRIAN HENRY ,  KAPLAN RICHARD DEAN ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI ,  SANCHEZ SUZAN ANN

IPC: H01L21/302 ,  G03F7/09 ,  H01B13/00 ,  H01L21/3065

Abstract: A method of image transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The resist is image wise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

公开(公告)号：DE3854113D1

公开(公告)日：1995-08-10

申请号：DE3854113

申请日：1988-09-27

Applicant: IBM

Inventor： DESILETS BRIAN HENRY ,  KAPLAN RICHARD DEAN ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI ,  SANCHEZ SUZAN ANN

IPC: H01L21/302 ,  G03F7/09 ,  H01B13/00 ,  H01L21/3065

Abstract: A method of image transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The resist is image wise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.