公开(公告)号：US3924320A

公开(公告)日：1975-12-09

申请号：US51623674

申请日：1974-10-18

Applicant: IBM

Inventor： ALTMAN CARL ,  CHAPMAN SYDNEY G ,  SATYA AKELLA V S

IPC: H01L21/00 ,  H01L21/263 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872 ,  B01J17/00

CPC classification number: H01L29/872 ,  H01L21/00 ,  H01L21/2633 ,  H01L21/28537 ,  H01L29/47 ,  Y10S438/906

Abstract: A method for improving the reverse leakage characteristics in metal semiconductor contact devices is disclosed. The process embodies ionic plasma bombardment as a step in producing improved reverse bias current voltage characteristics between metal semiconductor contacts.

Abstract translation: 公开了一种用于改善金属半导体接触装置中的反向泄漏特性的方法。 该方法体现离子等离子体轰击作为在金属半导体触点之间产生改进的反向偏置电流电压特性的步骤。

公开(公告)号：CA1049155A

公开(公告)日：1979-02-20

申请号：CA278400

申请日：1977-05-13

Applicant: IBM

Inventor： LEE JAMES H ,  SATYA AKELLA V S ,  LESSMANN BERND K S

IPC: H01L21/822 ,  G01R31/28 ,  H01L21/331 ,  H01L21/66 ,  H01L23/544 ,  H01L27/04 ,  H01L29/73 ,  H01L21/68

Abstract: INTEGRATED CIRCUIT ?ST STRUCTURE A complex test structure for integrated, semiconductor circuits in which the impurity regions of the test device are elongated, preferably in serpentine fashion. The elongated impurity regions emulate corresponding regions in regular integrated circuit devices. Additional regions are provided, each in elongated form, which, when impressed with appropriate voltage or currents, provide indications of defect evels and product yield in the regular devices. Advantageously, the serpentine test structure is fabricated on the same wafer and with the same process steps as the regular integrated circuit chips. In one embodiment, a plurality of such monitors are provided adjacent each other in the same test site. Regions in one monitor are selectively connected to regions in another monitor and to external contact pads by contact stations disposed between each monitor.