Abstract:
A method for improving the reverse leakage characteristics in metal semiconductor contact devices is disclosed. The process embodies ionic plasma bombardment as a step in producing improved reverse bias current voltage characteristics between metal semiconductor contacts.
Abstract:
A mirror array light valve comprises a plurality of closely adjacent mirror elements (23) each supported by an individual one of a plurality of post members (19p) disposed in a regular array on a transparent substrate (10). The post members (19p) support the mirror elements (23) under corresponding corners thereof so that all the mirror elements are deflectable in the same direction thereby causing light reflected by the mirror elements to be directed to a single quadrant. The post members are preferably hollow straight- sided cylindrical silicon dioxide structures produced by a self-limiting etching process.