公开(公告)号：JP2007305986A

公开(公告)日：2007-11-22

申请号：JP2007120486

申请日：2007-05-01

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： KATHERINE L SAENGER ,  CHRISTOPHER V JAHNES ,  SATYANARAYANA V NITTA ,  PETRARCA KEVIN SHAWN

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/7682 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a multilevel interconnect structure including air gaps and a method of fabricating the structure. SOLUTION: The multilevel interconnect structure including air gaps includes an assembly of interspersed line levels and via levels, in which the via level includes one or more conductive vias embedded in a dielectric layer and the dielectric layer in the via level is a solid arranged under and above the line structures of adjacent levels with perforations formed between the line structures. The line level includes conductive lines and dielectrics inclusive of air gaps. A solid dielectric bridge layer, which includes conductive contacts and is formed by filling in a perforated dielectric layer, is disposed above the assembly of the line levels and via levels interspersed with each other. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供包括气隙的多层互连结构和制造该结构的方法。

解决方案：包括气隙的多层互连结构包括散布的线路电平和通路电平的组件，其中通路电平包括嵌入电介质层中的一个或多个导电通孔，并且通孔级中的电介质层是固体 布置在相邻层次的线结构下方和上方，其中线结构之间形成有穿孔。 线路电平包括导线和包括气隙的电介质。 包括导电触点并且通过填充有孔电介质层形成的固体介质桥接层设置在彼此散布的线路电平和通路电平的组合之上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：SG106653A1

公开(公告)日：2004-10-29

申请号：SG200107687

申请日：2001-12-11

Applicant: IBM

Inventor： TIMOTHY JOSEPH DALTON ,  STEPHEN EDWARD GRECO ,  JEFFREY CURTIS HEDRICK ,  SATYANARAYANA V NITTA ,  SAMPATH PURUSHOTHAMAN ,  KENNETH PARKER RODBELL ,  ROBERT ROSENBERG

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L23/532

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.