公开(公告)号：SG101955A1

公开(公告)日：2004-02-27

申请号：SG200100551

申请日：2001-02-03

Applicant: IBM

Inventor： STEPHAN ALAN COHEN ,  TIMOTHY JOSEPH DALTON ,  JOHN ANTHONY FITZSIMMONS ,  STEPHEN MCCONNELL GATES ,  LYNNE M GIGNAC ,  PAUL CHARLES JAMISON ,  KANG-WOOK LEE ,  SAMPATH PURUSHOTHAMAN ,  DARRYL D RESTAINO ,  EVA SIMONYI ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/321 ,  H01L23/48

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：SG106653A1

公开(公告)日：2004-10-29

申请号：SG200107687

申请日：2001-12-11

Applicant: IBM

Inventor： TIMOTHY JOSEPH DALTON ,  STEPHEN EDWARD GRECO ,  JEFFREY CURTIS HEDRICK ,  SATYANARAYANA V NITTA ,  SAMPATH PURUSHOTHAMAN ,  KENNETH PARKER RODBELL ,  ROBERT ROSENBERG

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L23/532

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

公开(公告)号：SG102613A1

公开(公告)日：2004-03-26

申请号：SG200100695

申请日：2001-02-08

Applicant: IBM

Inventor： JUDITH M RUBINO ,  CHRISTOPHER JAHNES ,  ERIC G LINIGER ,  JAMES GARDNER RYAN ,  CARLOS J SAMBUCETTI ,  FRANK CARDONE ,  SAMPATH PURUSHOTHAMAN ,  JOHN ANTHONY FITZSIMMONS ,  STEPHEN MCCONNELL GATES

IPC: C22F1/10 ,  C22C19/00 ,  C22F1/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/76 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532