公开(公告)号：GB2494231B

公开(公告)日：2016-05-04

申请号：GB201208932

申请日：2012-05-21

Applicant: IBM

Inventor： JENG-BANG YAU ,  MICHAEL GORDON ,  KENNETH PARKER RODBELL

IPC: H01L31/119 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/74 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.

公开(公告)号：GB2543420A

公开(公告)日：2017-04-19

申请号：GB201616634

申请日：2016-09-30

Applicant: IBM

Inventor： KENNETH PARKER RODBELL ,  MICHAEL GORDON ,  JENG-BANG YAU ,  TAK HUNG NING

IPC: H01L31/115 ,  G01T1/02 ,  H01L27/12 ,  H01L29/735 ,  H01L31/11 ,  H01L31/18

Abstract: A monolithic integrated radiation sensor or dosimeter (and manufacturing method) to detect environmental radiation (e.g ionizing radiation, neutrons) includes a sensing structure (e.g SOI insulating buried oxide layer, BOX 22) and first and second lateral bipolar junction transistors (BJT, LBJT) of opposite polarity (i.e NPN and PNP BJT devices). The first lateral BJT 30 (Q1) acts as the radiation sensor; its base 33 electrically coupled to the sensing structure 22 (e.g BOX 22 or upper oxide 132 fig 5) and produces an output signal as the stored charge changes within sensing structure. The second lateral BJT acts as an amplifier whilst the polarity is such that the ionizing effect is minimized. At least one of the lateral BJTs has an inverted (base) configuration (122 fig 2). The base of the second LBJT amplifier is electrically connected to an output of the first sensing lateral BJT (e.g base/collector). The doping concentration of the base of the second LBJT is higher (e.g by a factor of ten) than that of the base. The output of the first sensing BJT is configured to pass current directly into the base of the second lateral BJT, and the output (collector) of the second BJT corresponds to the output of the second amplifying BJT device. The integrated radiation sensor may include a neutron conversion layer within the buried oxide layer or an oxide layer on top of the LBJT sensor base.

公开(公告)号：GB2543420B

公开(公告)日：2020-01-01

申请号：GB201616634

申请日：2016-09-30

Applicant: IBM

Inventor： KENNETH PARKER RODBELL ,  MICHAEL GORDON ,  JENG-BANG YAU ,  TAK HUNG NING

IPC: H01L31/115 ,  G01T1/02 ,  H01L27/12 ,  H01L29/735 ,  H01L31/11 ,  H01L31/18

Abstract: An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

公开(公告)号：SG106653A1

公开(公告)日：2004-10-29

申请号：SG200107687

申请日：2001-12-11

Applicant: IBM

Inventor： TIMOTHY JOSEPH DALTON ,  STEPHEN EDWARD GRECO ,  JEFFREY CURTIS HEDRICK ,  SATYANARAYANA V NITTA ,  SAMPATH PURUSHOTHAMAN ,  KENNETH PARKER RODBELL ,  ROBERT ROSENBERG

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L23/532

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.