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公开(公告)号：GB2573693A
公开(公告)日：2019-11-13
申请号：GB201910618
申请日：2018-01-03
Applicant: IBM
Inventor： TALIA SIMCHA GERSHON , KEVIN WAYNE BREW , SAURABH SINGH , DENNIS NEWNS
IPC: H01L45/00
Abstract: A memristive device includes a first conductive material layer. An oxide material layer is arranged on the first conductive layer. A second conductive material layer is arranged on the oxide material layer, where in the second conductive layer comprises a metal-alkali alloy.
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